DHG 10 I 1200PM

advanced

Sonic-FRD

Symbol

Definition

R a t i n g s

Features / Advantages:

● Planar passivated chips

● Very low leakage current

● Very short recovery time

● Improved thermal behaviour

● Very low Irm-values

● Very soft recovery behaviour

● Avalanche voltage rated for reliable

operation

● Soft reverse recovery for low EMI/RFI

● Low Irm reduces:

- Power dissipation within the diode

- Turn-on loss in the commutating switch

typ.

max.

I

FSM

I

R

A

µA

V

70

I

FAV

A

V

F

2.69

R

thJC

4.00

K/W

V

1

3

min.

10

ms (50 Hz), sine

Applications:

● Antiparallel diode for high frequency

switching devices

● Antisaturation diode

● Snubber diode

● Free wheeling diode

● Rectifiers in switch mode power

supplies (SMPS)

● Uninterruptible power supplies (UPS)

V

RRM

V

1200

15

T

VJ

V

°C

=

T

VJ

°C

=

mA

1.5

Package:

Part number

V

T

°C

I

F

=A

V

T

C

=30 °C

P

tot

31

W

T

C

°C

=

A

I

RM

8.5

/dt

I

F

=A;

V

A

t

rr

E

AS

tbd

mJ

T

VJ

°C

=

I

L =

µH

I

AR

A

V

tbd

f = 10 kHz

1.5·V

T

VJ

150

°C

-55

High Performance Fast Recovery Diode

Low Loss and Soft Recovery

Single Diode

V

I

t

RRM

FAV

rr

=

=

=

1200

10

75

10

T

10

-di

F

= 350 A/µs

800

tbd

100

DHG 10 I 1200PM

V

A

ns

1200

V

1200

25

25

25

t

p

=10

25

max. repetitive reverse voltage

reverse current

forward voltage

average forward current

thermal resistance junction to case

virtual junction temperature

total power dissipation

max. forward surge current

max. reverse recovery current

non-repetitive avalanche energy

repetitive avalanche current

reverse recovery time

Conditions

Unit

3.56

T

VJ

°C

= 25

C

J

tbd

pF

junction capacitance

V

600

T

VJ

125

V

F0

V

1.60

T

r

F

73.6

Ω

f = 1 MHz

=°C

25

m

TO-220FPAC

V

2.38

T

I

F

=A

V

10

125

3.33

I

F

=A

20

I

F

=A

20

ns

75

ns

● Industry standard outline

● Plastic overmolded tab for

electrical isolation

● Epoxy meets UL 94V-0

● RoHS compliant

T

VJ

°C

=25

T

VJ

°C

= 125

T

VJ

°C

=25

T

VJ

°C

= 125

rectangular, d = 0.5

threshold voltage

slope resistance

for power loss calculation only

Backside: isolated

IXYS reserves the right to change limits, conditions and dimensions.

© 2006 IXYS all rights reserved

* Data according to IEC 60747and per diode unless otherwise specified