FQT13N06

Thermal Characteristics

Symbol

Parameter

FQT13N06

Unit

Drain-Source Voltage

60

V

Drain Current

2.8

A

2.24

A

Drain Current

- Pulsed

(Note 1)

11.2

A

Gate-Source Voltage

± 25

V

Single Pulsed Avalanche Energy

(Note 2)

85

mJ

Avalanche Current

(Note 1)

2.8

A

Repetitive Avalanche Energy

(Note 1)

0.21

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

7.0

V/ns

2.1

W

- Derate above 25°C

0.017

W/°C

Operating and Storage Temperature Range

-55 to +150

°C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

°C

Symbol

Parameter

Typ

Max

Unit

Thermal Resistance, Junction-to-Ambient *

--

60

°C/W

! "

!

!

!

"

"

"

! "

!

!

!

"

"

"

S

D

G

SOT-223

* When mounted on the minimum pad size recommended (PCB Mount)

G

D

S

Description

This N-Channel enhancement mode power MOSFET

proprietary planar stripe and DMOS technology. This

advanced MOSFET technology has been especially

tailored to reduce on-state resistance, and to provide

superior switching performance and high avalanche

energy strength. These devices are suitable for

switched mode power supplies, audio amplifier, DC

motor control, and variable switching power

applications.

Features

•

• Low

Gate Charge (Typ. 5.8 nC)

• Low Crss (

Typ. 15 pF)

• 100%

Avalanche Tested

March 2013

60 V, 2.8 A, 140 mΩ

©20

02 Fairchild Semiconductor Corporation

FQT13N06 Rev. C0

www.fairchildsemi.com