1

Features

–5V Read

– 5V Programming

– One 8K Words (16K bytes) Boot Block with Programming Lockout

– Two 4K Words (8K bytes) Parameter Blocks

– One 240K Words (480K bytes) Main Memory Array Block

µs Typical

– 50 mA Active Current

– 300

µA CMOS Standby Current

Description

The AT49F004(T) and AT49F4096A(T) are 5-volt, 4-megabit Flash Memories orga-

nized as 524,288 words of 8 bits each or 256K words of 16 bits each. Manufactured

with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times

to 55 ns with power dissipation of just 275 mW. When deselected, the CMOS standby

current is less than 300

µA.

The device contains a user-enabled “boot block” protection feature. Two versions of

the feature are available: the AT49F004/4096A locates the boot block at lowest order

addresses (“bottom boot”); the AT49F004T/4096AT locates it at highest order

addresses (“top boot”).

To allow for simple in-system reprogrammability, the AT49F004(T)/4096A(T) does not

require high input voltages for programming. Reading data out of the device is similar

to reading from an EPROM; it has standard CE, OE, and WE inputs to avoid bus con-

tention. Reprogramming the AT49F004(T)/4096A(T) is performed by first erasing a

4-Megabit

(512K x 8/

256K x 16)

CMOS Flash

Memory

AT49F004

AT49F004T

AT49F4096A

AT49F4096AT

Preliminary

Rev. 1167A–09/98

Pin Configurations

Pin Name

Function

A0 - A18

Addresses

CE

Chip Enable

OE

Output Enable

WE

Write Enable

RESET

Reset

RDY/BUSY

Ready/Busy Output

I/O0 - I/O14

Data Inputs/Outputs

I/O15(A-1)

I/O15 (Data Input/Output, Word Mode)

A-1 (LSB Address Input, Byte Mode)

BYTE

Selects Byte or Word Mode

NC

No Connect

(continued)