Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

AT49BV8192T-20TC Datasheet(PDF) 3 Page - ATMEL Corporation

Part # AT49BV8192T-20TC
Description  8-Megabit 512K x 16 CMOS Flash Memory
Download  13 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  ATMEL [ATMEL Corporation]
Direct Link  http://www.atmel.com
Logo ATMEL - ATMEL Corporation

AT49BV8192T-20TC Datasheet(HTML) 3 Page - ATMEL Corporation

  AT49BV8192T-20TC Datasheet HTML 1Page - ATMEL Corporation AT49BV8192T-20TC Datasheet HTML 2Page - ATMEL Corporation AT49BV8192T-20TC Datasheet HTML 3Page - ATMEL Corporation AT49BV8192T-20TC Datasheet HTML 4Page - ATMEL Corporation AT49BV8192T-20TC Datasheet HTML 5Page - ATMEL Corporation AT49BV8192T-20TC Datasheet HTML 6Page - ATMEL Corporation AT49BV8192T-20TC Datasheet HTML 7Page - ATMEL Corporation AT49BV8192T-20TC Datasheet HTML 8Page - ATMEL Corporation AT49BV8192T-20TC Datasheet HTML 9Page - ATMEL Corporation Next Button
Zoom Inzoom in Zoom Outzoom out
 3 / 13 page
background image
AT49BV/LV8192(T)
3
signal to the RESET pin the boot block array can be repro-
grammed even if the boot block program lockout feature
has been enabled (see Boot Block Programming Lockout
Override section).
ERASURE: Before a word can be reprogrammed, it must
be erased. The erased state of memory bits is a logical “1”.
The entire device can be erased by using the Chip Erase
command or individual sectors can be erased by using the
Sector Erase commands.
CHIP ERASE: The entire device can be erased at one
time by using the 6-byte chip erase software code. After the
chip erase has been initiated, the device will internally time
the erase operation so that no external clocks are required.
The maximum time to erease the chip is t
EC.
If the boot block lockout has been enabled, the Chip Erase
will not erase the data in the boot block; it will erase the
main memory block and the parameter blocks only. After
the chip erase, the device will return to the read or standby
mode.
SECTOR ERASE: As an alternative to a full chip erase,
the device is organized into three sectors that can be indi-
vidually erased. There are two 8K word parameter block
sections and one sector consisting of the boot block and
the main memory array block. The Sector Erase command
is a six bus cycle operation. The sector address is latched
on the falling WE edge of the sixth cycle while the 30H data
input command is latched at the rising edge of WE. The
sector erase starts after the rising edge of WE of the sixth
cycle. The erase operation is internally controlled; it will
automatically time to completion. When the boot block pro-
gramming lockout feature is not enabled, the boot block
and the main memory block will erase together (from the
same sector erase command). Once the boot region has
been protected, only the main memory array sector will
erase when its sector erase command is issued.
WORD PROGRAMMING: Once a memory block is
erased, it is programmed (to a logical “0”) on a word-by-
word basis. Programming is accomplished via the internal
device command register and is a 4 bus cycle operation.
The device will automatically generate the required internal
program pulses.
Any commands written to the chip during the embedded
programming cycle will be ignored. If a hardware reset hap-
pens during programming, the data at the location being
programmed will be corrupted. Please note that a data “0”
cannot be programmed back to a “1”; only erase operations
can convert “0”s to “1”s. Programming is completed after
the specified tBP cycle time. The DATA polling feature may
also be used to indicate the end of a program cycle.
BOOT BLOCK PROGRAMMING LOCKOUT: The device
has one designated block that has a programming lockout
feature. This feature prevents programming of data in the
designated block once the feature has been enabled. The
size of the block is 8K words. This block, referred to as the
boot block, can contain secure code that is used to bring up
the system. Enabling the lockout feature will allow the boot
code to stay in the device while data in the rest of the
device is updated. This feature does not have to be acti-
vated; the boot block’s usage as a write protected region is
o p tio nal to t he use r . Th e a ddr ess r ang e of th e
49BV/LV8192 boot block is 00000H to 01FFFH while the
address range of the 49BV/LV81 92T is 7E000H to
7FFFFH.
Once the feature is enabled, the data in the boot block can
no longer be erased or programmed when input levels of
5.5V or less are used. Data in the main memory block can
still be changed through the regular programming method.
To activate the lockout feature, a series of six program
commands to specific addresses with specific data must be
performed. Please refer to the Command Definitions table.
BOOT BLOCK LOCKOUT DETECTION: A software
method is available to determine if programming of the boot
block section is locked out. When the device is in the soft-
ware product identification mode (see Software Product
Identification Entry and Exit sections) a read from address
location 00002H will show if programming the boot block is
locked out. If the data on I/O0 is low, the boot block can be
programmed; if the data on I/O0 is high, the program lock-
out feature has been enabled and the block cannot be pro-
grammed. The software product identification exit code
should be used to return to standard operation.
BOOT BLOCK PROGRAMMING LOCKOUT OVER-
RIDE: The user can override the boot block programming
lockout by taking the RESET pin to 12 volts during the
entire chip erase, sector erase or word programming oper-
ation. When the RESET pin is brought back to TTL levels
the boot block programming lockout feature is again active.
PRODUCT IDENTIFICATION: The product identification
mode identifies the device and manufacturer as Atmel. It
may be accessed by hardware or software operation. The
hardware operation mode can be used by an external pro-
grammer to identify the correct programming algorithm for
the Atmel product.
For details, see Operating Modes (for hardware operation)
or Software Product Identification. The manufacturer and
device code is the same for both modes.
DATA POLLING: The AT49BV/LV8192 features DATA
polling to indicate the end of a program cycle. During a pro-
gram cycle an attempted read of the last byte loaded will
result in the complement of the loaded data on I/O7. Once
the program cycle has been completed, true data is valid
on all outputs and the next cycle may begin. During a chip
or sector erase operation, an attempt to read the device will
give a “0” on I/O7. Once the program or erase cycle has
completed, true data will be read from the device. DATA
polling may begin at any time during the program cycle.


Similar Part No. - AT49BV8192T-20TC

ManufacturerPart #DatasheetDescription
logo
ATMEL Corporation
AT49BV8192A ATMEL-AT49BV8192A Datasheet
246Kb / 16P
   8-Megabit 1M x 8/ 512K x 16 CMOS Flash Memory
AT49BV8192A-10CI ATMEL-AT49BV8192A-10CI Datasheet
335Kb / 16P
   8-megabit (1M x 8/512K x 6) Flash memory
AT49BV8192A-11CI ATMEL-AT49BV8192A-11CI Datasheet
335Kb / 16P
   8-megabit (1M x 8/512K x 6) Flash memory
AT49BV8192A-11TI ATMEL-AT49BV8192A-11TI Datasheet
335Kb / 16P
   8-megabit (1M x 8/512K x 6) Flash memory
AT49BV8192A-12CC ATMEL-AT49BV8192A-12CC Datasheet
246Kb / 16P
   8-Megabit 1M x 8/ 512K x 16 CMOS Flash Memory
More results

Similar Description - AT49BV8192T-20TC

ManufacturerPart #DatasheetDescription
logo
ATMEL Corporation
AT49BV008A ATMEL-AT49BV008A Datasheet
246Kb / 16P
   8-Megabit 1M x 8/ 512K x 16 CMOS Flash Memory
AT49F004 ATMEL-AT49F004 Datasheet
243Kb / 15P
   4-Megabit 512K x 8/ 256K x 16 CMOS Flash Memory
AT49BV004 ATMEL-AT49BV004 Datasheet
241Kb / 15P
   4-Megabit 512K x 8/ 256K x 16 CMOS Flash Memory
AT49F8192AT-70TC ATMEL-AT49F8192AT-70TC Datasheet
344Kb / 17P
   8-megabit (1M x 8/512K x 16) Flash Memory
AT49F008A ATMEL-AT49F008A Datasheet
170Kb / 18P
   8-megabit (1M x 8/512K x 16) Flash Memory
AT49F8192 ATMEL-AT49F8192 Datasheet
241Kb / 11P
   8-Megabit 512K x 16 5-volt Only CMOS Flash Memory
AT49BV040B ATMEL-AT49BV040B Datasheet
355Kb / 21P
   4-megabit (512K x 8) Flash Memory
logo
Eon Silicon Solution In...
EN29LV800C EON-EN29LV800C Datasheet
1Mb / 40P
   8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory
logo
Winbond
W29C040 WINBOND-W29C040 Datasheet
261Kb / 20P
   512K X 8 CMOS FLASH MEMORY
logo
ATMEL Corporation
AT49BV8192A-11TI ATMEL-AT49BV8192A-11TI Datasheet
335Kb / 16P
   8-megabit (1M x 8/512K x 6) Flash memory
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com