Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

AT49LV080-12RI Datasheet(PDF) 2 Page - ATMEL Corporation

Part # AT49LV080-12RI
Description  8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory
Download  12 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  ATMEL [ATMEL Corporation]
Direct Link  http://www.atmel.com
Logo ATMEL - ATMEL Corporation

AT49LV080-12RI Datasheet(HTML) 2 Page - ATMEL Corporation

  AT49LV080-12RI Datasheet HTML 1Page - ATMEL Corporation AT49LV080-12RI Datasheet HTML 2Page - ATMEL Corporation AT49LV080-12RI Datasheet HTML 3Page - ATMEL Corporation AT49LV080-12RI Datasheet HTML 4Page - ATMEL Corporation AT49LV080-12RI Datasheet HTML 5Page - ATMEL Corporation AT49LV080-12RI Datasheet HTML 6Page - ATMEL Corporation AT49LV080-12RI Datasheet HTML 7Page - ATMEL Corporation AT49LV080-12RI Datasheet HTML 8Page - ATMEL Corporation AT49LV080-12RI Datasheet HTML 9Page - ATMEL Corporation Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 12 page
background image
Device Operation
READ: The AT49BV/LV080 is accessed like an EPROM.
When CE and OE are low and WE is high, the data stored
at the memory location determined by the address pins is
asserted on the outputs. The outputs are put in the high
impedance state whenever CE or OE is high. This dual-
line control gives designers flexibility in preventing bus
contention.
ERASURE: Before a byte can be reprogrammed, the
1024K bytes memory array (or 1008K bytes if the boot
block featured is used) must be erased. The erased state
of the memory bits is a logical “1”. The entire device can
be erased at one time by using a 6-byte software code.
The software chip erase code consists of 6-byte load com-
mands to specific address locations with a specific data
pattern (please refer to the Chip Erase Cycle Waveforms).
After the software chip erase has been initiated, the device
will internally time the erase operation so that no external
clocks are required. The maximum time needed to erase
the whole chip is tEC. If the boot block lockout feature has
been enabled, the data in the boot sector will not be
erased.
BYTE PROGRAMMING: Once the memory array is
erased, the device is programmed (to a logical “0”) on a
byte-by-byte basis. Please note that a data “0” cannot be
programmed back to a “1”; only erase operations can con-
vert “0”s to “1”s. Programming is accomplished via the in-
ternal device command register and is a 4 bus cycle op-
eration (please refer to the Command Definitions table).
The device will automatically generate the required inter-
nal program pulses.
The program cycle has addresses latched on the falling
edge of WE or CE, whichever occurs last, and the data
latched on the rising edge of WE or CE, whichever occurs
first. Programming is completed after the specified tBP cy-
cle time. The DATA polling feature may also be used to
indicate the end of a program cycle.
BOOT BLOCK PROGRAMMING LOCKOUT: The de-
vice has one designated block that has a programming
lockout feature. This feature prevents programming of
data in the designated block once the feature has been
enabled. The size of the block is 16K bytes. This block,
referred to as the boot block, can contain secure code that
is used to bring up the system. Enabling the lockout fea-
ture will allow the boot code to stay in the device while data
in the rest of the device is updated. This feature does not
have to be activated; the boot block’s usage as a write
protected region is optional to the user. The address
range of the AT49BV/LV080 boot block is 00000H to
03FFFH while the address range of the AT49BV/LV080T
boot block is FC000H to FFFFFH.
To activate the lockout feature, a series of six program
commands to specific addresses with specific data must
To allow for simple in-system reprogrammability, the
AT49BV/LV080 does not require high input voltages for
programming. 3-volt-only commands determine the read
and programming operation of the device. Reading data
out of the device is similar to reading from an EPROM.
Reprogramming the AT49BV/LV080 is performed by eras-
ing the entire 8 megabits of memory and then program-
ming on a byte-by-byte basis. The typical byte program-
ming time is a fast 30
µs. The end of a program cycle can
be optionally detected by the DATA polling feature. Once
the end of a byte program cycle has been detected, a new
access for a read or program can begin. The typical num-
ber of program and erase cycles is in excess of 10,000
cycles.
The optional 16K bytes boot block section includes a re-
programming write lock out feature to provide data integ-
rity. The boot sector is designed to contain user secure
code, and when the feature is enabled, the boot sector is
permanently protected from being reprogrammed.
Description (Continued)
OE, CE, AND WE
LOGIC
Y DECODER
X DECODER
INPUT/OUTPUT
BUFFERS
DATA LATCH
Y-GATING
OPTIONAL BOOT
BLOCK (16K BYTES)
MAIN MEMORY
(1008K BYTES)
OE
WE
CE
ADDRESS
INPUTS
VCC
GND
DATA INPUTS/OUTPUTS
I/O7 - I/O0
8
03FFFH
00000H
INPUT/OUTPUT
BUFFERS
DATA LATCH
Y-GATING
OPTIONAL BOOT
BLOCK (16K BYTES)
MAIN MEMORY
(1008K BYTES)
FC000H
00000H
AT49BV/LV080T
AT49BV/LV080
DATA INPUTS/OUTPUTS
I/O7 - I/O0
8
FFFFFH
FFFFFH
Block Diagram
2
AT49BV/LV080


Similar Part No. - AT49LV080-12RI

ManufacturerPart #DatasheetDescription
logo
ATMEL Corporation
AT49LV001 ATMEL-AT49LV001 Datasheet
171Kb / 20P
   1-Megabit 128K x 8 Single 2.7-Volt Battery-Voltage Flash Memory
AT49LV001 ATMEL-AT49LV001 Datasheet
290Kb / 21P
   1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT49LV001-12JC ATMEL-AT49LV001-12JC Datasheet
171Kb / 20P
   1-Megabit 128K x 8 Single 2.7-Volt Battery-Voltage Flash Memory
AT49LV001-12PC ATMEL-AT49LV001-12PC Datasheet
171Kb / 20P
   1-Megabit 128K x 8 Single 2.7-Volt Battery-Voltage Flash Memory
AT49LV001-12TC ATMEL-AT49LV001-12TC Datasheet
171Kb / 20P
   1-Megabit 128K x 8 Single 2.7-Volt Battery-Voltage Flash Memory
More results

Similar Description - AT49LV080-12RI

ManufacturerPart #DatasheetDescription
logo
ATMEL Corporation
AT49BV-LV002 ATMEL-AT49BV-LV002 Datasheet
120Kb / 21P
   2-Megabit (256K x 8) Single 2.7-volt Battery-Voltage??Flash Memory
AT49BV010 ATMEL-AT49BV010 Datasheet
88Kb / 11P
   1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory
AT49BV040 ATMEL-AT49BV040 Datasheet
210Kb / 12P
   4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory
AT49BV020 ATMEL-AT49BV020 Datasheet
167Kb / 10P
   2-Megabit 256K x 8 Single 2.7-volt Battery-Voltage Flash Memory
AT29BV020 ATMEL-AT29BV020_08 Datasheet
368Kb / 16P
   2-megabit (256K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT29BV040A ATMEL-AT29BV040A_08 Datasheet
361Kb / 16P
   4-megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT49BV002 ATMEL-AT49BV002 Datasheet
171Kb / 20P
   2-Megabit 256K x 8 Single 2.7-Volt Battery-Voltage Flash Memory
AT49BV040A ATMEL-AT49BV040A Datasheet
182Kb / 17P
   4-megabit (512K x 8) Single 2.7-volt Battery-Voltage??Flash Memory
AT49BV001A ATMEL-AT49BV001A Datasheet
182Kb / 18P
   1-megabit (128K x 8) Single 2.7-volt Battery-Voltage??Flash Memory
AT49BV002A ATMEL-AT49BV002A Datasheet
207Kb / 18P
   2-megabit (256K x 8) Single 2.7-volt Battery-Voltage Flash Memory
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com