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CL10C080DB8NNNC Datasheet(PDF) 10 Page - Samsung semiconductor |
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CL10C080DB8NNNC Datasheet(HTML) 10 Page - Samsung semiconductor |
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10 / 21 page  NO ITEM PERFORMANCE TEST CONDITION 15 High Temperature Resistance Appearance No mechanical damage shall occur. Applied Voltage : 200%* of the rated voltage Temperature : max. operating temperature Duration Time : 1000 +48/-0 Hr. Charge/Discharge Current : 50㎃ max. * refer to table(3) : 150%/100% of the rated voltage Perform the initial measurement according to Note1 for Class Ⅱ Perform the final measurement according to Note2. Capacitance Characteristics Capacitance Change Class Ⅰ Within ±3% or ±0.3㎊, Whichever is larger Class Ⅱ A(X5R)/ B(X7R) Within ±12.5% X(X6S) Within ±25% F(Y5V) Within ±30% Within ±30% Q (Class Ⅰ) Capacitance ≥30㎊ :Q ≥ 350 10≤ Capacitance <30 ㎊ :Q ≥ 275 + 2.5×C Capacitance < 10㎊ :Q ≥ 200 +10×C (C: Capacitance) Tanδ (Class Ⅱ) 1. Characteristic : A(X5R), B(X7R) 0.05max (16V and over) 0.075max (10V) 0.075max (6.3V except Table 1) 0.125max* (refer to Table 1) 2. Characteristic : F(Y5V) 0.075max (25V and over) 0.1max(16V, C<1.0㎌) 0.125max(16V, C≥1.0㎌) 0.15max (10V) 0.195max (6.3V) X(X6S) 0.11max (6.3V and below) Insulation Resistance 1,000 ㏁ or 50㏁·㎌ whichever is smaller. 16 Temperature Cycle Appearance No mechanical damage shall occur. Capacitor shall be subjected to 5 cycles. Condition for 1 cycle : Step Temp.(℃) Time(min.) 1 Min. operating temp.+0/-3 30 225 2~3 3 Max. operating temp.+3/-0 30 425 2~3 Leave the capacitor in ambient condition for specified time* before measurement * 24± 2hours (Class Ⅰ) 24 ± 2 hours (Class Ⅱ) Capacitance Characteristics Capacitance Change Class Ⅰ Within ±2.5% or ±0.25㎊ Whichever is larger Class Ⅱ A(X5R)/ B(X7R)/ Within ±7.5% X(X6S) Within ±15% F(Y5V) Within ±20% Q (Class Ⅰ) Within the specified initial value Tanδ (Class Ⅱ) Within the specified initial value Insulation Resistance Within the specified initial value RELIABILTY TEST CONDITION |
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