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TSM190N08 Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSM190N08 Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 4 page  TSM190N08 75V N-Channel Power MOSFET 2/4 Version: A12 Electrical Specifications (Ta = 25 oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 75 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 90A RDS(ON) -- 3.4 4.2 mΩ Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 2 3 4 V Zero Gate Voltage Drain Current VDS = 75V, VGS = 0V IDSS -- -- 1 uA Gate Body Leakage VGS = ±25V, VDS = 0V IGSS -- -- ±100 nA Dynamic Total Gate Charge VDS = 30V, ID = 90A, VGS = 10V Qg -- 160 -- nC Gate-Source Charge Qgs -- 35 -- Gate-Drain Charge Qgd -- 40 -- Input Capacitance VDS = 30V, VGS = 0V, f = 1.0MHz Ciss -- 8600 -- pF Output Capacitance Coss -- 780 -- Reverse Transfer Capacitance Crss -- 300 -- Switching Turn-On Delay Time VGS = 10V, VDS = 30V, RG = 3.3Ω td(on) -- 25 -- nS Turn-On Rise Time tr -- 40 -- Turn-Off Delay Time td(off) -- 85 -- Turn-Off Fall Time tf -- 45 -- Drain-Source Diode Characteristics and Maximum Rating Drain-Source Diode Forward Voltage VGS=0V, IS=90A VSD - 0.8 1.3 V Reverse Recovery Time IS = 90A, TJ=25 oC dI/dt = 100A/us tfr 70 nS Reverse Recovery Charge Qfr 115 nC Notes: 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. 2. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. RθJA shown below for single device operation on FR-4 in still air |
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