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Optimum Technology Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

Functional Block Diagram

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.

Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.

Ordering Information

BiFET HBT



4

CONTROL

BLOCK

ATTEN

RFIN

RFOUT

5

3

2

1

6

7

8

9

10

11

12

13

14

15

16

GND

NC

NC

NC

NC

GND

RFSA2013

VOLTAGE CONTROLLED ATTENUATOR

RFMD's RFSA2013 is a fully monolithic analog voltage controlled attenuator (VCA) featuring

exceptional linearity over a typical temperature compensated 30dB gain control range. It incor-

porates a revolutionary new circuit architecture to solve a long standing industry problem: high

IP3, high attenuation range, low DC current, broad bandwidth and temperature compensated

linear in dB control voltage characteristic. This voltage controlled attenuator is controlled by a

single positive control voltage with on chip DC conditioning circuitry. The slope of the control

voltage versus gain is selectable. The RFSA2013 draws a very low 1mA current and is packaged

in a small 3mm x 3mm QFN. This attenuator is matched to 50

 over its rated control range and

frequency with no external matching components required. Typical VCA's in this performance

category have poor inherent attenuation versus temperature and poor nonlinear attenuation

versus control voltage characteristics. To correct these shortcomings, other VCA's require exten-

sive off chip analog support circuitry that consume valuable PCB area and additional DC power.

This game changing product incorporates the complete solution in a small 3mm x 3mm QFN

package that reduces the footprint by 20X in area and reduces the DC power by 10X over con-

ventional PIN diode approaches.

Features



Patent Pending Circuit

Architecture



Broadband 50MHz to 6000MHz

Frequency Range



30dB Attenuation Range



+50dBm IIP3 Typical



+80dBm IIP2 Typical



High 1dB Compression

Point >+30dBm



Low Supply Current 1mA Typical



5V Power Supply



Linear in dB Control

Characteristic



Internal Temperature

Compensation



Class 1C ESD (1000V)



3.3V Version Available

(RFSA2023)



Complete Solution in a Small

3mm x 3mm, QFN Package

Applications



Cellular, 3G Infrastructure



WiBro, WiMax, LTE



Microwave Radio



High Linearity Power Control

DS120705

Package Style: QFN, 16-Pin, 0.9mm x 3mm x 3mm

RFSA2013

Voltage Con-

trolled Attenu-

ator

RFSA2013SR

7” Sample reel with 100 pieces

RFSA2013SQ

Sample bag with 25 pieces

RFSA2013TR7

7” Reel with 2500 pieces

RFSA2013PCK-410 50MHz to 6000MHz PCBA with 5-piece sample bag