SSM2220 datasheet(3/12 Pages) AD

Part #	SSM2220

Description	Audio Dual Matched PNP Transistor

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Data Sheet

SSM2220

Rev. C | Page 3 of 12

SPECIFICATIONS

TA = 25°C, unless otherwise noted.

Table 1.

Parameter

Symbol

Min

Typ

Max

Unit

Test Conditions/Comments

CURRENT GAIN1

hFE

VCB = 0 V to 36 V

80

165

IC = 1 mA

70

150

IC = 100 μA

60

120

IC = 10 μA

Current Gain Matching2

ΔhFE

0.5

6

%

IC = 100 μA, VCB = 0 V

NOISE VOLTAGE DENSITY3

en

IC = 1 mA, VCB = 0 V

0.8

2

nV/√Hz

fO = 10 Hz

0.7

1

nV/√Hz

fO = 100 Hz

0.7

1

nV/√Hz

fO = 1 kHz

0.7

1

nV/√Hz

fO = 10 kHz

OFFSET VOLTAGE4

VOS

40

200

μV

VCB = 0 V, IC = 100 μA

Offset Voltage Change vs. Collector Voltage

ΔVOS/ΔVCB

11

200

μV

IC = 100 μA, VCB1 = 0 V, VCB2 = −36 V

Offset Voltage Change vs. Collector Current

ΔVOS/ΔIC

12

75

μV

VCB = 0 V, IC1 = 10 μA, IC2 = 1 mA

OFFSET CURRENT

IOS

6

45

nA

IC = 100 μA, VCB = 0 V

COLLECTOR TO BASE LEAKAGE CURRENT

ICBO

50

400

pA

VCB = −36 V = VMAX

BULK RESISTANCE

rBE

0.3

0.75

Ω

VCB = 0 V, 10 μA ≤ IC ≤ 1 mA

COLLECTOR SATURATION VOLTAGE

VCE(SAT)

0.026

0.1

V

IC = 1 mA, IB = 100 μA

1

Current gain is measured at collector to base voltages (VCB) swept from 0 V to VMAX at indicated collector current. Typicals are measured at VCB = 0 V.

2

Current gain matching (

ΔhFE) is defined as follows:

ΔhFE =

C

FE

B

I

h

I

min

)

)(

(

100 ∆

3

Sample tested. Noise tested and specified as equivalent input voltage for each transistor.

4

Offset voltage is defined as follows:

VOS

= VBE1 – VBE2 =













C2

C1

I

q

KT ln

where VOS is the differential voltage for IC1 = IC2.

ELECTRICAL CHARACTERISTICS

−40°C ≤ TA ≤ +85°C, unless otherwise noted.

Table 2.

Parameter

Symbol

Min

Typ

Max

Unit

Test Conditions/Comments

CURRENT GAIN

hFE

VCB = 0 V to 36 V

60

125

IC = 1 mA

50

105

IC = 100 μA

40

90

IC = 10 μA

OFFSET VOLTAGE

VOS

30

265

μV

IC = 100 μA, VCB = 0 V

Offset Voltage Drift1

TCVOS

0.3

1.0

μV/°C

IC = 100 μA, VCB = 0 V

OFFSET CURRENT

IOS

10

200

nA

IC = 100 μA, VCB = 0 V

BREAKDOWN VOLTAGE (COLLECTOR TO EMITTER)

BVCEO

36

V

1

Guaranteed by VOS test (TCVOS = VOS/T for VOS << VBE), where T = 298K for TA = 25°C.

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