2N6338G datasheet(1/5 Pages) ONSEMI

Part #	2N6338G

Description	High-Power NPN Silicon Transistors

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October, 2011 − Rev. 12

1

Publication Order Number:

2N6338/D

2N6338, 2N6341

High-Power NPN Silicon

Transistors

. . . designed for use in industrial−military power amplifier and

switching circuit applications.

• High Collector−Emitter Sustaining Voltage −

VCEO(sus) = 100 Vdc (Min) − 2N6338

= 150 Vdc (Min) − 2N6341

• High DC Current Gain −

hFE = 30 − 120 @ IC = 10 Adc

= 12 (Min) @ IC = 25 Adc

• Low Collector−Emitter Saturation Voltage −

VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc

• Fast Switching Times @ IC = 10 Adc

tr = 0.3 ms (Max)

ts = 1.0 ms (Max)

tf = 0.25 ms (Max)

• Pb−Free Packages are Available

*MAXIMUM RATINGS

Rating

Symbol

2N6338

2N6341

Unit

Collector−Base Voltage

VCB

120

180

Vdc

Collector−Emitter Voltage

VCEO

100

150

Vdc

Emitter−Base Voltage

VEB

6.0

Vdc

Collector Current

Continuous

Peak

IC

25

50

Adc

Base Current

IB

10

Adc

Total Device Dissipation

@ TC = 25_C

Derate above 25_C

PD

200

1.14

W

W/°C

Operating and Storage

Junction

Temperature Range

TJ, Tstg

– 65 to + 200

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

θJC

0.875

_C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*Indicates JEDEC Registered Data.

Device

Package

Shipping

ORDERING INFORMATION

2N6338

TO−204AA

100 Units / Tray

2N6338G

TO−204AA

(Pb−Free)

TO−204AA

CASE 1−07

100 Units / Tray

25 AMPERE

POWER TRANSISTORS

NPN SILICON

http://onsemi.com

2N6341

TO−204AA

100 Units / Tray

2N6341G

TO−204AA

(Pb−Free)

100 Units / Tray

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