NVMFD5877NLT3G datasheet(1/6 Pages) ONSEMI

Part #	NVMFD5877NLT3G

Description	60 V, 39 m, 17 A, Dual N?묬hannel, Logic Level, Dual SO8FL

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Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

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November, 2013 − Rev. 8

1

Publication Order Number:

NVMFD5877NL/D

NVMFD5877NL,

NVMFD5877NLWF

Power MOSFET

60 V, 39 mW, 17 A, Dual N−Channel, Logic

Level, Dual SO8FL

Features

• Low RDS(on) to Minimize Conduction Losses

• Low Capacitance to Minimize Driver Losses

• NVMFD5877NLWF − Wettable Flanks Product

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free and are RoHS Compliant

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

60

V

Gate−to−Source Voltage

VGS

"20

V

Continuous Drain Cur-

rent RYJ−mb (Notes 1,

2, 3, 4)

Steady

State

Tmb = 25°C

ID

17

A

Tmb = 100°C

12

Power Dissipation

RYJ−mb (Notes 1, 2, 3)

Tmb = 25°C

PD

23

W

Tmb = 100°C

12

Continuous Drain Cur-

rent RqJA (Notes 1 &

3, 4)

Steady

State

TA = 25°C

ID

6

A

TA = 100°C

5

Power Dissipation

RqJA (Notes 1, 3)

TA = 25°C

PD

3.2

W

TA = 100°C

1.6

Pulsed Drain Current

TA = 25°C, tp = 10 ms

IDM

74

A

Operating Junction and Storage Temperature

TJ, Tstg

−55 to

+175

°C

Source Current (Body Diode)

IS

19

A

Single Pulse Drain−

to−Source Avalanche

Energy (TJ = 25°C,

VDD = 24 V, VGS =

10 V, RG = 25 W)

(IL(pk) = 14.5 A, L =

0.1 mH)

EAS

10.5

mJ

(IL(pk) = 6.3 A, L =

2 mH)

40

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

TL

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)

Parameter

Symbol

Value

Unit

Junction−to−Mounting Board (top) − Steady

State (Note 2, 3)

RYJ−mb

6.5

°C/W

Junction−to−Ambient − Steady State (Note 3)

RqJA

47

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Psi (Y) is used as required per JESD51−12 for packages in which

substantially less than 100% of the heat flows to single case surface.

3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.

4. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

ORDERING INFORMATION

http://onsemi.com

Device

Package

Shipping†

V(BR)DSS

RDS(on) MAX

ID MAX

60 V

39 mW @ 10 V

17 A

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

DFN8 5x6

(SO8FL)

CASE 506BT

MARKING DIAGRAM

60 mW @ 4.5 V

NVMFD5877NLT1G

DFN8

(Pb−Free)

1500 / Tape &

Reel

NVMFD5877NLT3G

DFN8

(Pb−Free)

5000 / Tape &

Reel

D1

D2

S1

G1

S2

G2

Dual N−Channel

D1

S1

G1

5877xx

AYWZZ

D2

D1

D2

S2

G2

D2

D1

1

NVMFD5877NLWFT1G

DFN8

(Pb−Free)

1500 / Tape &

Reel

NVMFD5877NLWFT3G

DFN8

(Pb−Free)

5000 / Tape &

Reel

5877NL = Specific Device Code

for NVMFD5877NL

5877LW = Specific Device Code

for NVMFD5877NLWF

A

= Assembly Location

Y

= Year

W

= Work Week

ZZ

= Lot Traceability

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