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S29GL01GS90FHIV020 Datasheet(PDF) 11 Page - SPANSION

Part # S29GL01GS90FHIV020
Description  GL-S MirrorBit짰 Eclipse??Flash Non-Volatile Memory Family
Download  106 Pages
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Manufacturer  SPANSION [SPANSION]
Direct Link  http://www.spansion.com
Logo SPANSION - SPANSION

S29GL01GS90FHIV020 Datasheet(HTML) 11 Page - SPANSION

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October 9, 2013 S29GL_128S_01GS_00_08
GL-S MirrorBit® Family
11
Data
She e t
The device control logic is subdivided into two parallel operating sections, the Host Interface Controller (HIC)
and the Embedded Algorithm Controller (EAC). HIC monitors signal levels on the device inputs and drives
outputs as needed to complete read and write data transfers with the host system. HIC delivers data from the
currently entered address map on read transfers; places write transfer address and data information into the
EAC command memory; notifies the EAC of power transition, hardware reset, and write transfers. The EAC
looks in the command memory, after a write transfer, for legal command sequences and performs the related
Embedded Algorithms.
Changing the non-volatile data in the memory array requires a complex sequence of operations that are
called Embedded Algorithms (EA). The algorithms are managed entirely by the device internal EAC. The
main algorithms perform programming and erase of the main array data. The host system writes command
codes to the flash device address space. The EAC receives the commands, performs all the necessary steps
to complete the command, and provides status information during the progress of an EA.
The erased state of each memory bit is a logic 1. Programming changes a logic 1 (High) to a logic 0 (Low).
Only an Erase operation is able to change a 0 to a 1. An erase operation must be performed on an entire
128-kbyte aligned and length group of data call a Sector. When shipped from Spansion all Sectors are
erased.
Programming is done via a 512-byte Write Buffer. It is possible to write from 1 to 256 words, anywhere within
the Write Buffer before starting a programming operation. Within the flash memory array, each 512-byte
aligned group of 512 bytes is called a Line. A programming operation transfers volatile data from the Write
Buffer to a non-volatile memory array Line. The operation is called Write Buffer Programming.
The Write Buffer is filled with 1’s after reset or the completion of any operation using the Write Buffer. Any
locations not written to a 0 by a Write to Buffer command are by default still filled with 1’s. Any 1’s in the Write
Buffer do not affect data in the memory array during a programming operation.
As each Page of data that was loaded into the Write Buffer is transferred to a memory array Line.
Sectors may be individually protected from program and erase operations by the Advanced Sector Protection
(ASP) feature set. ASP provides several, hardware and software controlled, volatile and non-volatile,
methods to select which sectors are protected from program and erase operations.
Table 1.1 S29GL-S Address Map
Type
Count
Addresses
Address within Page
16
A3 - A0
Address within Write Buffer
256
A7 - A0
Page
4096
A15 - A4
Write-Buffer-Line
256
A15 - A8
Sector
1024 (1 Gb)
512 (512 Mb)
256 (256 Mb)
128 (128 Mb)
AMAX - A16


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