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CM600DX-24S1 Datasheet(PDF) 6 Page - Mitsubishi Electric Semiconductor |
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CM600DX-24S1 Datasheet(HTML) 6 Page - Mitsubishi Electric Semiconductor |
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6 / 10 page  < IGBT MODULES > CM600DX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES INVERTER PART OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) T j =25 °C (Chip) VGE=15 V (Chip) 0 200 400 600 800 1000 1200 0 2 4 6 8 10 0 0.5 1 1.5 2 2.5 3 3.5 0 200 400 600 800 1000 1200 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) G-E short-circuited (Chip) 100 1000 10000 0 0.5 1 1.5 2 2.5 3 3.5 4 EMITTER-COLLECTOR VOLTAGE VEC (V) T j =150 °C T j =125 °C T j =25 °C T j =125 °C T j =25 °C VGE=20 V 12 V 11 V 10 V 9 V 15 V T j =150 °C Publication Date : December 2013 6 |
Similar Part No. - CM600DX-24S1 |
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Similar Description - CM600DX-24S1 |
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