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PM25CL1B120 Datasheet(PDF) 3 Page - Powerex Power Semiconductors |
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PM25CL1B120 Datasheet(HTML) 3 Page - Powerex Power Semiconductors |
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3 / 5 page  PM25CL1B120 Intellimod™ L1-Series Three Phase IGBT Inverter 25 Amperes/1200 Volts 3 Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 03/10 Rev. 1 Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Control Sector Circuit Current ID VD = 15V, VCIN = 15V, VN1-VNC — 6 12 mA VD = 15V, VCIN = 15V, V*P1-V*PC — 2 4 mA Input ON Threshold Voltage Vth(on) Applied between UP-VUPC, 1.2 1.5 1.8 Volts Input OFF Threshold Voltage Vth(off) VP-VVPC, WP-VWPC, UN- VN- WN-VNC 1.7 2.0 2.3 Volts Short Circuit Trip Level SC -20°C ≤ Tj ≤ 125°C, VD = 15V 50 — — Amperes Short Circuit Current Delay Time toff(SC) VD = 15V — 0.2 — µs Over Temperature Protection OT Trip Level 135 — — °C (Detect Tj of IGBT Chip) OT(hys) Hysteresis Level — 20 — °C Supply Circuit Under-voltage Protection UV Trip Level 11.5 12.0 12.5 Volts (-20 ≤ Tj ≤ 125°C) UVR Reset Level — 12.5 — Volts Fault Output Current* IFO(H) VD = 15V, VCIN = 15V — — 0.01 mA IFO(L) VD = 15V, VCIN = 15V — 10 15 mA Fault Output Pulse Width* tFO VD = 15V 1.0 1.8 — ms Thermal Characteristics Characteristic Symbol Condition Min. Typ. Max. Units Junction to Case Thermal Resistance Rth(j-c)Q IGBT (Per 1 Element) (Note 1) — — 0.97 °C/Watt Rth(j-c)D FWDi (Per 1 Element) (Note 1) — — 1.60 °C/Watt Contact Thermal Resistance Rth(c-f) Case to Fin Per Module, — — 0.038 °C/Watt Thermal Grease Applied (Note 1) Recommended Conditions for Use Characteristic Symbol Condition Value Units Supply Voltage VCC Applied across P-N Terminals ≤800 Volts Control Supply Voltage** VD Applied between VUP1-VUPC, 15.0 ± 1.5 Volts VVP1-VVPC, VWP1-VWPC, VN1-VNC Input ON Voltage VCIN(on) Applied between UP-VUPC, ≤0.8 Volts Input OFF Voltage VCIN(off) VP-VVPC, WP-VWPC, UN- VN- WN-VNC ≥9.0 Volts PWM Input Frequency fPWM — ≤20 kHz Arm Shoot-through Blocking Time tDEAD Input Signal ≥2.5 µs *Fault output is given only when the internal SC, OT and UV protections schemes of either upper or lower arm device operates to protect it. ** With ripple satisfying the following conditions: dv/dt swing ≤ ±5V/µs, Variation ≤ 2V peak to peak. Note 1: TC (under the chip) Measurement Point Arm UP VP WP UN VN WN Axis IGBT FWDi IGBT FWDi IGBT FWDi IGBT FWDi IGBT FWDi IGBT FWDi X 27.0 27.0 66.9 66.9 86.5 86.5 39.2 33.2 54.3 60.7 73.9 80.3 Y -7.0 -0.2 -7.0 -0.2 -7.0 -0.2 4.0 4.8 4.0 4.8 4.0 4.8 Y X BOTTOM VIEW |
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