Electronic Components Datasheet Search |
|
CY7C1021DV33-10BVXI Datasheet(PDF) 6 Page - Cypress Semiconductor |
|
CY7C1021DV33-10BVXI Datasheet(HTML) 6 Page - Cypress Semiconductor |
6 / 13 page CY7C1021DV33 Document #: 38-05460 Rev. *G Page 6 of 13 Data Retention Characteristics Over the Operating Range Parameter Description Conditions Min. Max. Unit VDR VCC for data retention 2 V ICCDR Data retention current VCC = VDR = 2.0 V, CE > VCC – 0.3 V, VIN > VCC – 0.3 V or VIN < 0.3 V Industrial 3mA tCDR [3] Chip deselect to data retention time 0 ns tR [11] Operation recovery time tRC ns Data Retention Waveform Switching Waveforms Read Cycle No. 1 (Address Transition Controlled)[12, 13] Read Cycle No. 2 (OE Controlled)[13, 14] 3.0 V 3.0 V tCDR VDR > 2 V DATA RETENTION MODE tR CE VCC PREVIOUS DATA VALID DATA VALID RC tAA tOHA tRC ADDRESS DATA OUT 50% 50% DATA VALID tRC tACE tDOE tLZOE tLZCE tPU HIGH IMPEDANCE tHZOE tHZBE tPD tDBE tLZBE tHZCE HIGH IMPEDANCE ICC ISB OE CE ADDRESS DATA OUT VCC SUPPLY BHE,BLE CURRENT Notes 11. Full device operation requires linear VCC ramp from VDR to VCC(min.) > 50 s or stable at VCC(min.) > 50 s. 12. Device is continuously selected. OE, CE, BHE and/or BLE = VIL. 13. WE is HIGH for Read cycle. 14. Address valid prior to or coincident with CE transition LOW. |
Similar Part No. - CY7C1021DV33-10BVXI |
|
Similar Description - CY7C1021DV33-10BVXI |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |