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MT200CB12T2 Datasheet(PDF) 1 Page - Jiangsu APT Semiconductor Co.,Ltd

Part # MT200CB12T2
Description  Thyristor/Diode Modules
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Manufacturer  APTSEMI [Jiangsu APT Semiconductor Co.,Ltd]
Direct Link  http://en.apt-semi.com/
Logo APTSEMI - Jiangsu APT Semiconductor Co.,Ltd

MT200CB12T2 Datasheet(HTML) 1 Page - Jiangsu APT Semiconductor Co.,Ltd

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MT200CB20T2
Document Number:S-M0052
www.apt-semi.com
Rev.1.0, May.31, 2013
1
Module Type
◆Diode
Maximum Ratings
Symbol
Item
Conditions
Values
Units
ID
Output Current(D.C.)
Tc=85℃
200
A
IFSM
Surge forward current
t=10mS Tvj =45℃
6800
A
i
2t
Circuit Fusing Consideration
231200
A
2s
Visol
Isolation Breakdown Voltage(R.M.S)
a.c.50HZ;r.m.s.;1min
3000
V
Tvj
Operating Junction Temperature
-40 to +125
Tstg
Storage Temperature
-40 to +125
Mt
Mounting Torque
To terminals(M6)
3±15%
Nm
Ms
To heatsink(M6)
5±15%
Nm
Weight
Module(
Approximately)
165
g
Thermal Characteristics
Symbol
Item
Conditions
Values
Units
Rth(j-c)
Thermal Impedance, max.
Junction to Case
0.08
/W
Rth(c-s)
Thermal Impedance, max.
Case to Heatsink
0.05
/W
Electrical Characteristics
Thyristor/Diode Modules
VRRM / VDRM
800 to 2000V
IFAV / ITAV
200Amp
Features
International standard package
High Surge Capability
Glass passivated chip
Simple Mounting
Heat transfer through aluminum oxide
DBCceramic isolated metal baseplate
UL recognized applied for file no. E360040
TYPE
VRRM/VDRM
VRSM
MT200CB08T2
MT200CB12T2
MT200CB16T2
MT200CB18T2
MT200CB20T2
800V
1200V
1600V
1800V
900V
1300V
1700V
1900V
Applications
Power Converters
Lighting Control
DC Motor Control and Drives
Heat and temperature control
Circuit
Symbol
Item
Conditions
Values
Units
Min.
Typ.
Max.
VFM
Forward Voltage Drop, max.
T=25℃ IF =620A
1.70
V
IRRM
Repetitive Peak Reverse Current,
max.
Tvj =25℃ VRD=VRRM
Tvj =125℃ VRD=VRRM
≤0.5
≤9
mA
mA


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