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PSS20S71F6 Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor

Part # PSS20S71F6
Description  Dual-In-Line Package Intelligent Power Module
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

PSS20S71F6 Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor

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< Dual-In-Line Package Intelligent Power Module >
PSS20S71F6
TRANSFER MOLDING TYPE
INSULATED TYPE
Publication Date : December 2013
2
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
Parameter
Condition
Ratings
Unit
VCC
Supply voltage
Applied between P-NU,NV,NW
450
V
VCC(surge)
Supply voltage (surge)
Applied between P-NU,NV,NW
500
V
VCES
Collector-emitter voltage
600
V
±IC
Each IGBT collector current
TC= 25°C
20
A
±ICP
Each IGBT collector current (peak)
TC= 25°C, less than 1ms
40
A
PC
Collector dissipation
TC= 25°C, per 1 chip
76.9
W
Tj
Junction temperature
-20~+150
°C
CONTROL (PROTECTION) PART
Symbol
Parameter
Condition
Ratings
Unit
VD
Control supply voltage
Applied between VP1-VNC, VN1-VNC
20
V
VDB
Control supply voltage
Applied between VUFB-VUFS, VVFB-VVFS ,VWFB-VWFS
20
V
VIN
Input voltage
Applied between UP, VP, WP-VPC, UN, VN, WN-VNC
-0.5~VD+0.5
V
VFO
Fault output supply voltage
Applied between FO-VNC
-0.5~VD+0.5
V
IFO
Fault output current
Sink current at FO terminal
1
mA
VSC
Current sensing input voltage
Applied between CIN-VNC
-0.5~VD+0.5
V
TOTAL SYSTEM
Symbol
Parameter
Condition
Ratings
Unit
VCC(PROT)
Self protection supply voltage limit
(Short circuit protection capability)
VD = 13.5~16.5V, Inverter Part
Tj = 125°C, non-repetitive, less than 2
μs
400
V
TC
Module case operation temperature
Measurement point of Tc is provided in Fig.1
-20~+100
°C
Tstg
Storage temperature
-40~+125
°C
Viso
Isolation voltage
60Hz, Sinusoidal, AC 1min, between connected all pins
and heat sink plate
2500
Vrms
Fig. 1: TC MEASUREMENT POINT
THERMAL RESISTANCE
Symbol
Parameter
Condition
Limits
Unit
Min.
Typ.
Max.
Rth(j-c)Q
Junction to case thermal
resistance
(Note 1)
Inverter IGBT part (per 1/6 module)
-
-
1.3
K/W
Rth(j-c)F
Inverter FWDi part (per 1/6 module)
-
-
3.0
K/W
Note 1: Grease with good thermal conductivity and long-
term endurance should be applied evenly with about +100μm~+200μm on the contacting surface of
DIPIPM and heat sink. The contacting thermal resistance between DIPIPM case and heat sink Rth(c-f) is determined by the thickness and the thermal
conductivity of the applied grease. For reference, Rth(c-f) is about 0.3K
/W (per 1/6 module, grease thickness: 20μm, thermal conductivity: 1.0W/m•k).
Control terminals
Tc point
IGBT chip position
FWDi chip position
Power terminals
Heat sink side
Groove
17.7mm
18mm


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