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PSS20S71F6 Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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PSS20S71F6 Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor |
2 / 12 page < Dual-In-Line Package Intelligent Power Module > PSS20S71F6 TRANSFER MOLDING TYPE INSULATED TYPE Publication Date : December 2013 2 MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol Parameter Condition Ratings Unit VCC Supply voltage Applied between P-NU,NV,NW 450 V VCC(surge) Supply voltage (surge) Applied between P-NU,NV,NW 500 V VCES Collector-emitter voltage 600 V ±IC Each IGBT collector current TC= 25°C 20 A ±ICP Each IGBT collector current (peak) TC= 25°C, less than 1ms 40 A PC Collector dissipation TC= 25°C, per 1 chip 76.9 W Tj Junction temperature -20~+150 °C CONTROL (PROTECTION) PART Symbol Parameter Condition Ratings Unit VD Control supply voltage Applied between VP1-VNC, VN1-VNC 20 V VDB Control supply voltage Applied between VUFB-VUFS, VVFB-VVFS ,VWFB-VWFS 20 V VIN Input voltage Applied between UP, VP, WP-VPC, UN, VN, WN-VNC -0.5~VD+0.5 V VFO Fault output supply voltage Applied between FO-VNC -0.5~VD+0.5 V IFO Fault output current Sink current at FO terminal 1 mA VSC Current sensing input voltage Applied between CIN-VNC -0.5~VD+0.5 V TOTAL SYSTEM Symbol Parameter Condition Ratings Unit VCC(PROT) Self protection supply voltage limit (Short circuit protection capability) VD = 13.5~16.5V, Inverter Part Tj = 125°C, non-repetitive, less than 2 μs 400 V TC Module case operation temperature Measurement point of Tc is provided in Fig.1 -20~+100 °C Tstg Storage temperature -40~+125 °C Viso Isolation voltage 60Hz, Sinusoidal, AC 1min, between connected all pins and heat sink plate 2500 Vrms Fig. 1: TC MEASUREMENT POINT THERMAL RESISTANCE Symbol Parameter Condition Limits Unit Min. Typ. Max. Rth(j-c)Q Junction to case thermal resistance (Note 1) Inverter IGBT part (per 1/6 module) - - 1.3 K/W Rth(j-c)F Inverter FWDi part (per 1/6 module) - - 3.0 K/W Note 1: Grease with good thermal conductivity and long- term endurance should be applied evenly with about +100μm~+200μm on the contacting surface of DIPIPM and heat sink. The contacting thermal resistance between DIPIPM case and heat sink Rth(c-f) is determined by the thickness and the thermal conductivity of the applied grease. For reference, Rth(c-f) is about 0.3K /W (per 1/6 module, grease thickness: 20μm, thermal conductivity: 1.0W/m•k). Control terminals Tc point IGBT chip position FWDi chip position Power terminals Heat sink side Groove 17.7mm 18mm |
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