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LM5102SD Datasheet(PDF) 3 Page - Texas Instruments |
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LM5102SD Datasheet(HTML) 3 Page - Texas Instruments |
3 / 19 page VDD HB HO HS LO VSS LI HI 1 10 2 9 3 8 4 7 RT1 RT2 5 6 LM5102 www.ti.com SNVS268A – MAY 2004 – REVISED MARCH 2013 Connection Diagram Figure 1. 10-Lead VSSOP, WSON PIN FUNCTIONS PIN NAME DESCRIPTION APPLICATION INFORMATION VSSOP WSON(1) Locally decouple to VSS using low ESR/ESL capacitor, 1 1 VDD Positive gate drive supply located as close to IC as possible. Connect the positive terminal of bootstrap capacitor to the HB pin and connect negative terminal of bootstrap capacitor to 2 2 HB High-side gate driver bootstrap rail HS. The Bootstrap capacitor should be placed as close to IC as possible. Connect to gate of high side MOSFET with short low 3 3 HO High-side gate driver output inductance path. Connect bootstrap capacitor negative terminal and source of 4 4 HS High-side MOSFET source connection high side MOSFET. Resistor from RT1 to ground programs the leading edge delay High-side output edge delay of the high side gate driver. The resistor should be placed 5 5 RT1 programming close to the IC to minimize noise coupling from adjacent traces. Resistor from RT2 to ground programs the leading edge delay 6 6 RT2 Low-side output edge delay programming of the low side gate driver. The resistor should be placed close to the IC to minimize noise coupling from adjacent traces. 7 7 HI High-side driver control input TTL compatible thresholds. Unused inputs should be tied to ground and not left open 8 8 LI Low-side driver control input 9 9 VSS Ground return All signals are referenced to this ground. Connect to the gate of the low side MOSFET with a short low 19 19 LO Low-side gate driver output inductance path. (1) For the WSON package, it is recommended that the exposed pad on the bottom of the LM5100 / LM5101 be soldered to ground plane on the PC board, and the ground plane should extend out from beneath the IC to help dissipate the heat.. These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Copyright © 2004–2013, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Links: LM5102 |
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