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LM5102SD Datasheet(PDF) 3 Page - Texas Instruments

Part # LM5102SD
Description  LM5102 High Voltage Half-Bridge Gate Driver with Programmable Delay
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

LM5102SD Datasheet(HTML) 3 Page - Texas Instruments

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VDD
HB
HO
HS
LO
VSS
LI
HI
1
10
2
9
3
8
4
7
RT1
RT2
5
6
LM5102
www.ti.com
SNVS268A – MAY 2004 – REVISED MARCH 2013
Connection Diagram
Figure 1. 10-Lead VSSOP, WSON
PIN FUNCTIONS
PIN
NAME
DESCRIPTION
APPLICATION INFORMATION
VSSOP
WSON(1)
Locally decouple to VSS using low ESR/ESL capacitor,
1
1
VDD
Positive gate drive supply
located as close to IC as possible.
Connect the positive terminal of bootstrap capacitor to the HB
pin and connect negative terminal of bootstrap capacitor to
2
2
HB
High-side gate driver bootstrap rail
HS. The Bootstrap capacitor should be placed as close to IC
as possible.
Connect to gate of high side MOSFET with short low
3
3
HO
High-side gate driver output
inductance path.
Connect bootstrap capacitor negative terminal and source of
4
4
HS
High-side MOSFET source connection
high side MOSFET.
Resistor from RT1 to ground programs the leading edge delay
High-side output edge delay
of the high side gate driver. The resistor should be placed
5
5
RT1
programming
close to the IC to minimize noise coupling from adjacent
traces.
Resistor from RT2 to ground programs the leading edge delay
6
6
RT2
Low-side output edge delay programming of the low side gate driver. The resistor should be placed close
to the IC to minimize noise coupling from adjacent traces.
7
7
HI
High-side driver control input
TTL compatible thresholds. Unused inputs should be tied to
ground and not left open
8
8
LI
Low-side driver control input
9
9
VSS
Ground return
All signals are referenced to this ground.
Connect to the gate of the low side MOSFET with a short low
19
19
LO
Low-side gate driver output
inductance path.
(1)
For the WSON package, it is recommended that the exposed pad on the bottom of the LM5100 / LM5101 be soldered to ground plane
on the PC board, and the ground plane should extend out from beneath the IC to help dissipate the heat..
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Copyright © 2004–2013, Texas Instruments Incorporated
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