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LM3697 Datasheet(PDF) 2 Page - Texas Instruments

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Part # LM3697
Description  High-Efficiency Three-String White LED Driver
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

LM3697 Datasheet(HTML) 2 Page - Texas Instruments

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A B C D
1
2
3
Top View
D C B A
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2
3
Bottom View
LM3697
SNOSCS2A – NOVEMBER 2013 – REVISED DECEMBER 2013
www.ti.com
Application Circuit Component List
Current/Voltage Rating
Component
Manufacturer
Value
Part Number
Size (mm)
(Resistance)
L
TDK
10 µH
VLF302512MT-100M
2.5 mm x 3.0 mm x 1.2
620 mA/0.25
mm
COUT
TDK
1 µF
C2012X5R1H105
0805
50V
CIN
TDK
2.2 µF
C1005X5R1A225
0402
10V
Diode
On-Semi
Schottky
NSR0240V2T1G
SOD-523
40V, 250 mA
Connection Diagram
Figure 1. 12-Bump DSBGA Package YFQ0012CAA
Pin Descriptions/Functions
Pin
Name
Description
PWM Brightness Control Input for CABC operation. PWM is a high-impedance input and
A1
PWM
cannot be left floating, if not used connect to GND.
A2
SDA
Serial Data Connection for I2C-Compatible Interface.
Hardware enable input. Drive this pin high to enable the device. Drive this pin low to force
A3
HWEN
the device into a low power shutdown. HWEN is a high-impedance input and cannot be left
floating.
Input Terminal to high-voltage Current Sink #1 (40V max). The boost converter regulates
B1
HVLED1
the minimum of HVLED1, HVLED2 and HVLED3 to VHR.
B2
SCL
Serial Clock Connection for I2C-Compatible Interface.
B3
IN
Input Voltage Connection. Bypass IN to GND with a minimum 2.2 µF ceramic capacitor.
Input Terminal to high-voltage Current Sink #2 (40V max). The boost converter regulates
C1
HVLED2
the minimum of HVLED1, HVLED2 and HVLED3 to VHR.
C2
GND
Ground
C3
GND
Ground
Input Terminal to high-voltage Current Sink #3 (40V max). The boost converter regulates
D1
HVLED3
the minimum of HVLED1, HVLED2 and HVLED3 to VHR.
Over-Voltage Sense Input. Connect OVP to the positive terminal of the inductive boost's
D2
OVP
output capacitor (COUT).
Drain Connection for the internal NFET. Connect SW to the junction of the inductor and the
D3
SW
Schottky diode anode.
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
2
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Copyright © 2013, Texas Instruments Incorporated
Product Folder Links: LM3697


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