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TIP107 Datasheet(PDF) 2 Page - Boca Semiconductor Corporation |
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TIP107 Datasheet(HTML) 2 Page - Boca Semiconductor Corporation |
2 / 2 page Continental Device India Limited Data Sheet Page 2 of 3 Collector current IC max. 8.0 A Collector peak current ICM max. 15 A Base current IB max. 1.0 A Total power dissipation up to TC = 25°C Ptot max. 80 W Derate above 25°C max 0.64 W/° C Total power dissipation up to TA = 25°C Ptot max. 2.0 W Derate above 25°C max 0.016 W/° C Junction temperature Tj max. 150 °C Storage temperature Tstg –65 to +150 °C THERMAL RESISTANCE From junction to ambient Rth j–a 62.5 °C/W From junction to case Rth j–c 1.56 °C/W CHARACTERISTICS Tamb = 25°C unless otherwise specified 100 101 102 105 106 107 Collector cutoff current IB = 0; VCE = 30 V ICEO max. 50 – – µA IB = 0; VCE = 40 V ICEO max. – 50 – µA IB = 0; VCE = 50 V ICEO max. – – 50 µA IE = 0; VCB = 60V ICBO max. 50 – – µA IE = 0; VCB = 80V ICBO max. – 50 – µA IE = 0; VCB = 100V ICBO max. – – 50 µA Emitter cut-off current IC = 0; VEB = 5 V IEBO max. 8 mA Breakdown voltages IC = 30 mA; IB = 0 VCEO(sus)* min. 60 80 100 V IC = 1 mA; IE = 0 VCBO min. 60 80 100 V IE = 1 mA; IC = 0 VEBO min. 5.0 V Saturation voltages IC = 3 A; IB = 6 mA VCEsat* max. 2.0 V IC = 8 A; IB = 80 mA VCEsat* max. 2.5 V Base-emitter on voltage IC = 8 A; VCE = 4 V VBE(on)* max. 2.8 V D.C. current gain IC = 3 A; VCE = 4 V hFE* min. 1.0 K max. 20 K IC = 8 A; VCE = 4 V hFE* min. 200 Small signal current gain IC = 3A; VCE = 4V; f = 1.0 MHz |hfe| min. 4.0 Output capacitance f = 0.1 MHz IE = 0; VCB = 10V, PNP Co max. 300 pF NPN max. 200 pF Forward voltage of commutation diode IF = –IC = 10A; IB = 0 VF* max. 2.8 V * Pulsed: pulse duration = 300 µs; duty cycle ≤ 2%. TIP100, TIP101, TIP102 TIP105, TIP106, TIP107 http://www.bocasemi.com page: 2 |
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