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TIP31A Datasheet(PDF) 2 Page - Boca Semiconductor Corporation |
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TIP31A Datasheet(HTML) 2 Page - Boca Semiconductor Corporation |
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2 / 2 page  Continental Device India Limited Data Sheet Page 2 of 3 Collector current IC max. 3.0 A Collector current (Peak) ICM max. 5.0 A Base current IB max. 1.0 A Total power dissipation upto TC=25°C Ptot max. 40 W Derate above 25°C max 0.32 W/°C Total power dissipation upto TA=25°C Ptot max. 2 W Derate above 25°C max 0.016 W/°C Junction temperature Tj max. 150 °C Storage temperature Tstg –65 to +150 ºC THERMAL RESISTANCE From junction to case Rth j–c 3.125 °C/W From junction to ambient Rth j–a 62.5 °C/W CHARACTERISTICS Tamb = 25°C unless otherwise specified 31 31A 31B 31C 32 32A 32B 32C Collector cutoff current IB = 0; VCE = 30V ICEO max. 0.3 0.3 – – mA IB = 0; VCE = 60V ICEO max. – – 0.3 0.3 mA VBE = 0; VCE = VCEO(max) ICES max. 0.2 mA Emitter cut-off current IC = 0; VEB = 5 V IEBO max. 1.0 mA Breakdown voltages IC = 30 mA; IB = 0 VCEO(sus)* min. 40 60 80 100 V IC = 1 mA; IE = 0 VCBO min. 40 60 80 100 V IE = 1 mA; IC = 0 VEBO min. 5.0 V Saturation voltage IC = 3 A; IB = 375 mA VCEsat* max. 1.2 V Base emitter on voltage IC = 3 A; VCE = 4 V VBE(on)* max. 1.8 V D.C. current gain IC = 1 A; VCE = 4 V hFE* min. 25 IC = 3 A; VCE = 4 V hFE* min. 10 max. 50 Small-signal current gain IC = 0.5A; VCE = 10V; f = 1 KHz |hfe| min. 20 Transition frequency IC = 0.5A; VCE = 10V; f = 1 MHz fT (1) min. 3 MHz * Pulse test: pulse width ≤ 300 µs; duty cycle ≤ 2%. (1) fT = |hfe|• ftest TIP31, TIP31A, TIP31B, TIP31C TIP32, TIP32A, TIP32B, TIP32C http://www.bocasemi.com page: 2 |
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