R0201-BS616LV2011

Revision 2.5

April 2002

1

Very Low Power/Voltage CMOS SRAM

128K X 16 bit

• Very low operation voltage : 2.4 ~ 5.5V

• Very low power consumption :

Vcc = 3.0V

C-grade: 20mA (Max.) operating current

I-grade: 25mA (Max.) operating current

0.1uA (Typ.) CMOS standby current

Vcc = 5.0V

C-grade: 40mA (Max.) operating current

I -grade: 45mA (Max.) operating current

0.6uA (Typ.) CMOS standby current

• High speed access time :

-70

70ns (Max.) at Vcc = 3.0V

-10

100ns (Max.) at Vcc = 3.0V

• Automatic power down when chip is deselected

• Three state outputs and TTL compatible

• Fully static operation

• Data retention supply voltage as low as 1.5V

• Easy expansion with CE and OE options

• I/O Configuration x8/x16 selectable by LB and UB pin

FEATURES

The BS616LV2011 is a high performance, very low power CMOS Static

Random Access Memory organized as 131,072 words by 16 bits and

operates from a wide range of 2.4V to 5.5V supply voltage.

Advanced CMOS technology and circuit techniques provide both high

speed and low power features with a typical CMOS standby current

of 0.1uA and maximum access time of 70/100ns in 3V operation.

Easy

memory

expansion is

provided by an

active LOW chip

enable(CE), active LOW output enable(OE) and three-state output

drivers.

The BS616LV2011 has an automatic power down feature, reducing the

power consumption significantly when chip is deselected.

The BS616LV2011 is available in DICE form, JEDEC standard 44-pin

TSOP Type II package , JEDEC standard 48-pin TSOP Type I package

and 48-ball BGA package.

DESCRIPTION

Row

Decoder

Memory Array

1024 x 2048

Column I/O

Write Driver

Sense Amp

Column Decoder

Data

Buffer

Output

A3 A2 A1

Data

Input

Buffer

Control

Gnd

Vcc

OE

DQ0

A16

A7

A15

16

16

16

16

WE

CE

DQ15

A5

A6

A13

14

128

2048

BLOCK DIAGRAM

1024

20

A14

A12

A9

A4

A0

A11

A8

Address

Input

Buffer

A10

Address Input Buffer

.

.

.

.

UB

.

.

.

.

LB

PRODUCT FAMILY

PIN CONFIGURATIONS

Bril

reserves the right to modify document contents without notice.

BS616LV2011

A4

A3

A2

A1

A0

CE

DQ0

DQ1

DQ2

DQ3

VCC

GND

DQ4

DQ5

DQ6

DQ7

WE

A16

A15

A14

A13

A12

A5

A6

A7

OE

UB

LB

DQ15

DQ14

DQ13

DQ12

GND

VCC

DQ11

DQ10

DQ9

DQ8

NC

A8

A9

A10

A11

NC

1

2

3

4

14

16

19

21

22

43

31

29

27

25

23

5

6

7

8

9

10

11

12

39

38

37

36

35

34

33

BS616LV2011EC

BS616LV2011EI

13

15

17

18

20

44

42

41

40

32

30

28

26

24

POWER DISSIPATION

SPEED

( ns )

STANDBY

Operating

PRODUCT

FAMILY

OPERATING

TEMPERATURE

Vcc

RANGE

Vcc=

3.0V

Vcc=

3.0V

Vcc=

5.0V

Vcc=

3.0V

Vcc=

5.0V

PKG TYPE

BS616LV2011DC

DICE

BS616LV2011EC

TSOP2-44

BS616LV2011TC

TSOP1-48

BS616LV2011AC

2.4V ~ 5.5V

70/100

40mA

BGA-48-0608

0.7uA

6uA

20mA

BS616LV2011DI

DICE

BS616LV2011EI

TSOP2-44

BS616LV2011TI

TSOP1-48

BS616LV2011AI

2.4V ~ 5.5V

70/100

45mA

BGA-48-0608

1.5uA

25uA

25mA

48-ball BGA top view

G

H

F

E

D

C

A9

A8

D15

D14

VSS

D9

D13

A14

D12

D11

D10

A5

B

D8

A3

A0

A11

A10

A15

D5

A16

A7

A6

D4

D3

D1

D7

D6

D2

A4

A1

A2

D0

N.C.

VCC

VSS

VCC

N.C.

CE

N.C.

N.C.

N.C.

N.C.

A12

A13

WE

ALB

1

UB

OE

234

5

6

BSI