BS616LV2023AI datasheet(4/11 Pages) BSI

Part #	BS616LV2023AI

Description	Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable

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Manufacturer	BSI [Brilliance Semiconductor]

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Revision 2.4

April 2002

4

PARAMETER

NAME

PARAMETER

TEST CONDITIONS

MIN. TYP.(1) MAX.

UNITS

V IL

Guaranteed Input Low

Voltage (2)

Vcc=3.0V

-0.5

--

0.8

V

V IH

Guaranteed Input High

Voltage (2)

Vcc=3.0V

2.0

--

Vcc+0.2

V

I IL

Input Leakage Current

= 0V to Vcc

Vcc = Max, VIN

--

1

uA

I OL

Output Leakage Current

Vcc = Max, CE1 = VIH or CE2=V

VI/O = 0V to Vcc

IL

or OE = VIH,

--

1

uA

V OL

Output Low Voltage

= 2mA

Vcc = Max, IOL

Vcc=3.0V

--

0.4

V

V OH

Output High Voltage

= -1mA

Vcc = Min, IOH

Vcc=3.0V

2.4

--

V

I CC

Operating Power Supply

Current

IL

, CE2=VIH

(3)

Vcc=3.0V

Vcc = Max, CE1= V

IDQ = 0mA, F = Fmax

--

20

mA

I CCSB

Standby Current TL

Vcc = Max, CE1 = VIHor CE2=VIL

IDQ = 0mA

Vcc=3.0V

--

1

mA

I CCSB1

Standby Current MOS

Vcc-0.2V or

0.2V ,

Vcc - 0.2V or VIN 0.2V

Vcc = Max, CE1

CE2

Other inputs

Vcc=3.0V

--

0.1

0.7

uA

1. Typical characteristics are at TA = 25oC.

2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.

3. Fmax = 1/t

RC .

DC ELECTRICAL CHARACTERISTICS (TA = 0oC to +70oC)

BSI

BS616LV2023

R0201-BS616LV2023

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