BS616LV4023 datasheet(4/11 Pages) BSI

Part #	BS616LV4023

Description	Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable

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Manufacturer	BSI [Brilliance Semiconductor]

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Revision 2.0

April 2002

4

1. Typical characteristics are at TA = 25oC.

2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.

3. Fmax = 1/t

RC .

DC ELECTRICAL CHARACTERISTICS (TA = 0oC to +70oC)

BSI

BS616LV4023

R0201-BS616LV4023

PARAMETER

NAME

PARAMETER

TEST CONDITIONS

MIN. TYP. (1) MAX.

UNITS

VIL

Guaranteed Input Low

Voltage

(2)

Vcc=3V

-0.5

--

0.8

V

VIH

Guaranteed Input High

Voltage

(2)

Vcc=3V

2.0

--

Vcc+0.2

V

IIL

Input Leakage Current

Vcc = Max, VIN= 0V to Vcc

--

1

uA

IOL

Output Leakage Current

Vcc = Max, CE1 = VIH or CE2=VIL or OE =

VIH, VI/O = 0V to Vcc

--

1

uA

VOL

Output Low Voltage

Vcc = Max, IOL = 2mA

Vcc=3V

--

0.4

V

VOH

Output High Voltage

Vcc = Min, IOH = -1mA

Vcc=3V

2.4

--

V

ICC

Operating Power Supply

Current

Vcc = Max, CE1= VIL, CE2=VIH

IDQ = 0mA, F = Fmax

(3)

Vcc=3V

--

20

mA

ICCSB

Standby Current-TTL

Vcc = Max, CE1 = VIH or CE2=VIL

IDQ = 0mA

Vcc=3V

--

1

mA

ICCSB1

Standby Current-CMOS

Vcc = Max, CE1 Vcc-0.2V or

CE2 0.2V; VIN

Vcc - 0.2V or

VIN 0.2V

Vcc=3V

--

0.25

1.5

uA

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