BS616LV4025 datasheet(5/11 Pages) BSI

Part #	BS616LV4025

Description	Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable

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Manufacturer	BSI [Brilliance Semiconductor]

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Revision 2.4

April 2002

5

SYMBOL

PARAMETER

TEST CONDITIONS

MIN.

TYP. (1)

MAX.

UNITS

VDR

Vcc for Data Retention

CE1

Vcc - 0.2V or CE2

0.2V ;

VIN

Vcc - 0.2V or VIN

0.2V

1.5

--

V

ICCDR

Data Retention Current

CE1

Vcc - 0.2V or CE2

0.2V

VIN

Vcc - 0.2V or VIN

0.2V

--

0.1

1.5

uA

tCDR

Chip Deselect to Data

Retention Time

0

--

ns

tR

Operation Recovery Time

See Retention Waveform

TRC

(2)

--

ns

1. Vcc = 1.5V, TA = + 25OC

2. t

RC = Read Cycle Time

DATA RETENTION CHARACTERISTICS ( TA = 0 to + 70oC )

BSI

BS616LV4025

LOW VCC DATA RETENTION WAVEFORM (1) ( CE1 Controlled )

CE1

Data Retention Mode

Vcc

t CDR

Vcc

t R

VIH

Vcc

VDR

2.0V

CE1

Vcc - 0.2V

LOW VCC DATA RETENTION WAVEFORM (2) ( CE2 Controlled )

CE2

Data Retention Mode

Vcc

t CDR

Vcc

t R

VIL

Vcc

VDR

2.0V

CE2

0.2V

R0201-BS616LV4025

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