BS616UV1620BI datasheet(5/12 Pages) BSI

Part #	BS616UV1620BI

Description	Ultra Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable

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Manufacturer	BSI [Brilliance Semiconductor]

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Revision 2.2

April 2001

5

SYMBOL

PARAMETER

TEST CONDITIONS

MIN.

TYP. (1)

MAX.

UNITS

VDR

Vcc for Data Retention

CE1

Vcc - 0.2V or CE2

0.2V or

LB

Vcc - 0.2V and UB

Vcc - 0.2V

VIN

Vcc - 0.2V or VIN

0.2V

1.5

--

V

ICCDR

Data Retention Current

CE1

Vcc - 0.2V or CE2

0.2V

VIN

Vcc - 0.2V or VIN

0.2V

--

0.8

15

uA

tCDR

Chip Deselect to Data

Retention Time

0--

--

ns

tR

Operation Recovery Time

See Retention Waveform

TRC (2)

--

ns

DATA RETENTION CHARACTERISTICS ( TA = 0oC to +70oC )

1. Vcc = 1.5V, TA = + 25OC

2. t

RC = Read Cycle Time

BSI

BS616UV1620

LOW VCC DATA RETENTION WAVEFORM (1) ( CE1 Controlled )

CE1

Data Retention Mode

Vcc

t CDR

Vcc

t R

VIH

Vcc

VDR

1.5V

CE1

Vcc - 0.2V

LOW VCC DATA RETENTION WAVEFORM (2) ( CE2 Controlled )

CE2

Data Retention Mode

Vcc

t CDR

Vcc

t R

VIL

Vcc

VDR

1.5V

CE2

0.2V

R0201-BS616UV1620

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BS616UV1620BI Datasheet(PDF) 5 Page - Brilliance Semiconductor

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