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BS616UV2011DI Datasheet(PDF) 5 Page - Brilliance Semiconductor

Part # BS616UV2011DI
Description  Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit
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Manufacturer  BSI [Brilliance Semiconductor]
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BS616UV2011DI Datasheet(HTML) 5 Page - Brilliance Semiconductor

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R0201-BS616UV2011
Revision 2.5
April 2002
5
NOTES:
1. WE is high for read Cycle.
2. Device is continuously selected when CE = VIL
.
3. Address valid prior to or coincident with CE transition low.
4. OE = VIL
.
5. Transition is measured
500mV from steady state with CL = 5pF as shown in Figure 1B.
The parameter is guaranteed but not 100% tested.
±
BSI
BS616UV2011
SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE1 (1,2,4)
t RC
t OH
t AA
D
OUT
ADDRESS
t OH
t OH
READ CYCLE3 (1,4)
t RC
t OE
D
OUT
LB,UB
CE
OE
ADDRESS
t CLZ
(5) t
ACS
t CHZ(1,5)
t OHZ (5)
t OLZ
t AA
READ CYCLE2 (1,3,4)
t CLZ
t CHZ
(5)
D
OUT
LB,UB
CE
(5)
t BA
t ACS
t BE
t BDO
t BDO
t BA
t BE


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