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BS62LV2003SC Datasheet(PDF) 6 Page - Brilliance Semiconductor

Part # BS62LV2003SC
Description  Very Low Power/Voltage CMOS SRAM 256K X 8 bit
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Manufacturer  BSI [Brilliance Semiconductor]
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Logo BSI - Brilliance Semiconductor

BS62LV2003SC Datasheet(HTML) 6 Page - Brilliance Semiconductor

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R0201-BS62LV2003
Revision 2.4
April 2002
6
JEDEC
PARAMETER
NAME
PARAMETER
NAME
DESCRIPTION
BS62LV2003-70
MIN. TYP. MAX.
BS62LV2003-10
MIN. TYP. MAX.
UNIT
tt
WC
Write Cycle Time
AVAX
70
--
--
100
--
--
ns
t
E1LWH
t
CW
Chip Select to End of Write
70
--
--
100
--
--
ns
t
AVWL
t
AS
Address Set up Time
0
--
--
0
--
--
ns
t
AVWH
t
AW
Address Valid to End of Write
70
--
--
100
--
--
ns
t
WLWH
t
WP
Write Pulse Width
35
--
--
50
--
--
ns
t
WHAX
t
WR1
Write Recovery Time
(CE1 , WE)
0
--
--
0
--
--
ns
t
E2LAX
t
WR2
Write Recovery Time
(CE2)
0
--
--
0
--
--
ns
t
WLOZ
t
WHZ
Write to Output in High Z
0--
30
0
--
40
ns
t
DVWH
t
DW
Data to Write Time Overlap
30
--
--
40
--
--
ns
t
WHDX
t
DH
Data Hold from Write Time
0
--
--
0
--
--
ns
t
GHOZ
t
OHZ
Output Disable to Output in High Z
0--
30
0
--
40
ns
t
WHQX
t
OW
End of Write to Output Active
5
----
10
----
ns
AC ELECTRICAL CHARACTERISTICS ( TA = 0oC to + 70oC, Vcc = 3.0V )
WRITE CYCLE
SWITCHING WAVEFORMS (WRITE CYCLE)
BSI
BS62LV2003
WRITE CYCLE1 (1)
t WR1
(3)
t CW
(11)
(11)
t CW
(2)
t WP
t AW
t OHZ
(4,10)
t AS
t WR2
(3)
t DH
t DW
D
IN
D
OUT
WE
CE2
CE1
OE
ADDRESS
(5)
(5)
t WC


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