®

ADS7809

3

ELECTRICAL

ADS7809P, U

ADS7809PB, UB

PARAMETER

CONDITIONS

MIN

TYP

MAX

MIN

TYP

MAX

UNITS

DIGITAL OUTPUTS

Data Format

Serial 16 bits

Data Co

Binary Two’s Complement or Straight Binary

Pipeline Delay

Conversion results only available after completed conversion.

Data Clock

Selectable for internal or external data clock

Internal

EXT/INT LOW

2.3

T

MHz

(Output Only When

Transmitting Data)

External

EXT/INT HIGH

0.1

10

TT

MHz

(Can Run Continually)

+0.4

T

V

T

V

Leakage Current

High-Z State,

±5

T

µA

Output Capacitance

High-Z State

15

T

pF

POWER SUPPLIES

Specified Performance

Must be

≤ V

ANA

+4.75

+5

+5.25

TT

T

V

+4.75

+5

+5.25

TT

T

V

0.3

T

mA

16

T

mA

Power Dissipation: PWRD LOW

100

T

mW

PWRD HIGH

50

T

µW

TEMPERATURE RANGE

Specified Performance

–40

+85

TT

°C

Derated Performance

–55

+125

TT

°C

Storage

–65

+150

TT

°C

Thermal Resistance (

θ

Plastic DIP

75

T

°C/W

SOIC

75

T

°C/W

TSame as specification for ADS7809P, U.

NOTES: (1) LSB means Least Significant Bit. For the

±10V input range, one LSB is 305µV. (2) Typical rms noise at worst case transitions and temperatures. (3)

As measured with fixed resistors shown in Figure 4. Adjustable to zero with external potentiometer. (4) For bipolar input ranges, full scale error is the worst case

of –Full Scale or +Full Scale untrimmed deviation from ideal first and last code transitions, divided by the transition voltage (not divided by the full-scale range) and

includes the effect of offset error. For unipolar input ranges, full scale error is the deviation of the last code transition divided by the transition voltage. It also includes

the effect of offset error. (5) All specifications in dB are referred to a full-scale

±10V input. (6) Full-Power Bandwidth defined as Full-Scale input frequency at which

Signal-to-(Noise+Distortion) degrades to 60dB. (7) Recovers to specified performance after 2 x FS input overvoltage.

REF ....................................... Indefinite Short to AGND2,

Ground Voltage Differences: DGND, AGND2 .................................

±0.3V

Maximum Junction Temperature .................................................. +165

°C

Internal Power Dissipation ............................................................ 700mW

Lead Temperature (soldering, 10s) .............................................. +300

°C

ABSOLUTE MAXIMUM RATINGS

GUARANTEED

MINIMUM

MAXIMUM

NO MISSING

SIGNAL-TO-

SPECIFICATION

PACKAGE

LINEARITY

CODE LEVEL

(NOISE + DISTORTION)

TEMPERATURE

DRAWING

PRODUCT

ERROR (LSB)

(LSB)

RATIO (dB)

RANGE (

PACKAGE

ADS7809P

±3

15

83

–40 to +85

20-Pin Plastic DIP

222

ADS7809PB

±2

16

86

–40 to +85

20-Pin Plastic DIP

222

ADS7809U

±3

15

83

–40 to +85

20-Lead SOIC

221

ADS7809UB

±2

16

86

–40 to +85

20-Lead SOIC

221

NOTE: (1) For detailed drawing and dimension table, please see end of data sheet, or Appendix C of Burr-Brown IC Data Book.

PACKAGE/ORDERING INFORMATION

ELECTROSTATIC

DISCHARGE SENSITIVITY

This integrated circuit can be damaged by ESD. Burr-Brown

recommends that all integrated circuits be handled with

appropriate precautions. Failure to observe proper handling

and installation procedures can cause damage.

ESD damage can range from subtle performance degrada-

tion to complete device failure. Precision integrated circuits

may be more susceptible to damage because very small

parametric changes could cause the device not to meet its

published specifications.