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INA129UA Datasheet(PDF) 2 Page - Burr-Brown (TI) |
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INA129UA Datasheet(HTML) 2 Page - Burr-Brown (TI) |
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2 / 10 page  SPECIFICATIONS At TA = +25°C, VS = ±15V, RL = 10kΩ, unless otherwise noted. INA128P, U INA128PA, UA INA129P, U INA129PA, UA PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS T Specification same as INA128P, U or INA129P, U. NOTE: (1) Input common-mode range varies with output voltage—see typical curves. (2) Guaranteed by wafer test. (3) Temperature coefficient of the 50k Ω (or 49.4kΩ) term in the gain equation. (4) Nonlinearity measurements in G = 1000 are dominated by noise. Typical nonlinearity is ±0.001%. INPUT Offset Voltage, RTI Initial TA = +25°C ±10 ±100/G ±50 ±500/G ±25 ±100/G ±125 ±1000/G µV vs Temperature TA = TMIN to TMAX ±0.2 ± 2/G ±0.5 ± 20/G ±0.2 ± 5/G ±1 ± 20/G µV/°C vs Power Supply VS = ±2.25V to ±18V ±0.2 ±20/G ±1 ±100/G T ±2 ±200/G µV/V Long-Term Stability ±0.1 ±3/G T µV/mo Impedance, Differential 1010 || 2 T Ω || pF Common-Mode 1011 || 9 T Ω || pF Common-Mode Voltage Range(1) VO = 0V (V+) – 2 (V+) – 1.4 TT V (V–) + 2 (V–) + 1.7 TT V Safe Input Voltage ±40 T V Common-Mode Rejection VCM = ±13V, ∆RS = 1kΩ G=1 80 86 73 T dB G=10 100 106 93 T dB G=100 120 125 110 T dB G=1000 120 130 110 T dB BIAS CURRENT ±2 ±5 T ±10 nA vs Temperature ±30 T pA/ °C Offset Current ±1 ±5 T ±10 nA vs Temperature ±30 T pA/ °C NOISE VOLTAGE, RTI G = 1000, RS = 0Ω f = 10Hz 10 T nV/ √Hz f = 100Hz 8 T nV/ √Hz f = 1kHz 8 T nV/ √Hz fB = 0.1Hz to 10Hz 0.2 T µVp-p Noise Current f=10Hz 0.9 T pA/ √Hz f=1kHz 0.3 T pA/ √Hz fB = 0.1Hz to 10Hz 30 T pAp-p GAIN Gain Equation, INA128 1 + (50k Ω/R G) T V/V INA129 1 + (49.4k Ω/R G) T V/V Range of Gain 1 10000 TT V/V Gain Error G=1 ±0.01 ±0.024 T ±0.1 % G=10 ±0.02 ±0.4 T ±0.5 % G=100 ±0.05 ±0.5 T ±0.7 % G=1000 ±0.5 ±1 T ±2% Gain vs Temperature(2) G=1 ±1 ±10 TT ppm/ °C 50k Ω (or 49.4kΩ) Resistance(2, 3) ±25 ±100 TT ppm/ °C Nonlinearity VO = ±13.6V, G=1 ±0.0001 ±0.001 T ±0.002 % of FSR G=10 ±0.0003 ±0.002 T ±0.004 % of FSR G=100 ±0.0005 ±0.002 T ±0.004 % of FSR G=1000 ±0.001 (Note 4) TT % of FSR OUTPUT Voltage: Positive RL = 10kΩ (V+) – 1.4 (V+) – 0.9 TT V Negative RL = 10kΩ (V–) + 1.4 (V–) + 0.8 TT V Load Capacitance Stability 1000 T pF Short-Circuit Current +6/–15 T mA FREQUENCY RESPONSE Bandwidth, –3dB G=1 1.3 T MHz G=10 700 T kHz G=100 200 T kHz G=1000 20 T kHz Slew Rate VO = ±10V, G=10 4 T V/ µs Settling Time, 0.01% G=1 7 T µs G=10 7 T µs G=100 9 T µs G=1000 80 T µs Overload Recovery 50% Overdrive 4 T µs POWER SUPPLY Voltage Range ±2.25 ±15 ±18 TT T V Current, Total VIN = 0V ±700 ±750 TT µA TEMPERATURE RANGE Specification –40 85 TT °C Operating –40 125 TT °C θ JA 8-Pin Dip 80 T °C/W SO-8 SOIC 150 T °C/W |
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