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HCU6N70S Datasheet(PDF) 1 Page - SemiHow Co.,Ltd.

Part # HCU6N70S
Description  700V N-Channel Super Junction MOSFET
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Manufacturer  SEMIHOW [SemiHow Co.,Ltd.]
Direct Link  http://www.semihow.com
Logo SEMIHOW - SemiHow Co.,Ltd.

HCU6N70S Datasheet(HTML) 1 Page - SemiHow Co.,Ltd.

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background image
2
1
3
BV
DSS = 700 V
R
DS(on) typ = 1.05
I
D =5.0 A
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 7 nC (Typ.)
Extended Safe Operating Area
Lower R
DS(ON) : 1.05
GS=10V
100% Avalanche Tested
FEATURES
Absolute Maximum Ratings
T
C=25
unless otherwise specified
HCU6N70S
700V N-Channel Super Junction MOSFET
Symbol
Parameter
Value
Units
V
DSS
Drain-Source Voltage
700
V
I
D
Drain Current
– Continuous (T
C = 25
)
5.0
A
Drain Current
– Continuous (T
C = 100
)
3.2
A
I
DM
Drain Current
– Pulsed
(Note 1)
13.0
A
V
GS
Gate-Source Voltage
Static
20
V
AC (f>1 Hz)
30
V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
25
mJ
I
AR
Avalanche Current
(Note 1)
1.0
A
E
AR
Repetitive Avalanche Energy
(Note 1)
0.1
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
50
V/ns
P
D
Power Dissipation (T
C = 25
)
28
W
T
J, TSTG
Operating and Storage Temperature Range
-55 to +150
T
L
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
300
1.Gate 2. Drain 3. Source
Thermal Resistance Characteristics
Symbol
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
--
4.4
/W
R
JA
Junction-to-Ambient
--
60.5
T
sold
Soldering temperature, wave soldering
only allowed at leads
--
260
Dec 2013
I-PAK


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