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HCU6N70S Datasheet(PDF) 1 Page - SemiHow Co.,Ltd. |
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HCU6N70S Datasheet(HTML) 1 Page - SemiHow Co.,Ltd. |
1 / 7 page 2 1 3 BV DSS = 700 V R DS(on) typ = 1.05 I D =5.0 A Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 7 nC (Typ.) Extended Safe Operating Area Lower R DS(ON) : 1.05 GS=10V 100% Avalanche Tested FEATURES Absolute Maximum Ratings T C=25 unless otherwise specified HCU6N70S 700V N-Channel Super Junction MOSFET Symbol Parameter Value Units V DSS Drain-Source Voltage 700 V I D Drain Current – Continuous (T C = 25 ) 5.0 A Drain Current – Continuous (T C = 100 ) 3.2 A I DM Drain Current – Pulsed (Note 1) 13.0 A V GS Gate-Source Voltage Static 20 V AC (f>1 Hz) 30 V E AS Single Pulsed Avalanche Energy (Note 2) 25 mJ I AR Avalanche Current (Note 1) 1.0 A E AR Repetitive Avalanche Energy (Note 1) 0.1 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 50 V/ns P D Power Dissipation (T C = 25 ) 28 W T J, TSTG Operating and Storage Temperature Range -55 to +150 T L Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 300 1.Gate 2. Drain 3. Source Thermal Resistance Characteristics Symbol Parameter Typ. Max. Units R JC Junction-to-Case -- 4.4 /W R JA Junction-to-Ambient -- 60.5 T sold Soldering temperature, wave soldering only allowed at leads -- 260 Dec 2013 I-PAK |
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