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HDP10A03X Datasheet(PDF) 1 Page - SemiHow Co.,Ltd. |
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HDP10A03X Datasheet(HTML) 1 Page - SemiHow Co.,Ltd. |
1 / 3 page ◎ SEMIHOW REV.A0,Nov 2010 Thermal Resistance Characteristics Maximum Ratings TO-220AB Symbol Parameter Value Units 03 035 04 045 05 06 V RRM Peak Repetitive Reverse Voltage 30 35 40 45 50 60 V V RWM Working Peak Reverse Voltage V R DC Blocking Voltage V R(RMS) R.M.S Reverse Voltage 21 25 28 32 35 42 V I F(AV) Average Rectifier Forward Current - Total Device (Rated V R), TC=125℃ 5.0 A 10 A I FM Peak Repetitive Forward Current (Rate V R, Square Wave, 20kHz) 10 A I FSM Non-Repetitive Peak Surge Current (Surge applied at rate load conditions half ware, single phase, 60Hz) 125 A T J, TSTG Operating and Storage Temperature Range -65 to +150 ℃ Symbol Parameter Typ. Max. Units RθJC Junction-to-Case -- 4.2 ℃/W Symbol Parameter Value Units 03 035 04 045 05 06 V F Maximum Instantaneous Forward Voltage - ( IF =5.0 Amp TC = 25℃) - ( IF =5.0 Amp TC = 100℃) 0.55 0.47 0.65 0.55 V I R Maximum Instantaneous Reverse Current - ( Rated DC Voltage, TC = 25℃) - ( Rated DC Voltage, TC = 125℃) 0.5 20 mA Electrial Characteristics Low Forward Voltage. Low Switching noise. High Current Capacity Guarantee Reverse Avalanche. Guard-Ring for Stress Protection. Low Power Loss & High efficiency. 150℃ Operating Junction Temperature Low Stored Charge Majority Carrier Conduction. Plastic Material used Carries Underwriters Laboratory Flammability Classification 94V-O ESD: 8KV(Min.) Human-Body Model In compliance with EU RoHs 2002/95/EC directives FEATURES HDP10A03x Thru HDP10A06x Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. 30-60 VOLTS 10 AMPERES 2 1 3 JAN 2010 |
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