◎ SEMIHOW REV.A0,Nov 2010

Maximum Ratings

Symbol

Parameter

Value

Units

03

035

04

045

05

06

V

RRM

Peak Repetitive Reverse Voltage

30

35

40

45

50

60

V

V

RWM

Working Peak Reverse Voltage

V

R

DC Blocking Voltage

V

R(RMS)

R.M.S Reverse Voltage

21

25

28

32

35

42

V

I

F(AV)

Average Rectifier Forward Current

- Total Device (Rated V

10

A

20

A

I

FM

Peak Repetitive Forward Current

(Rate V

20

A

I

FSM

Non-Repetitive Peak Surge Current (Surge applied at

rate load conditions half ware, single phase, 60Hz)

200

A

T

Operating and Storage Temperature Range

-65 to +125

℃

Symbol

Parameter

Value

Units

03

035

04

045

05

06

V

F

Maximum Instantaneous Forward Voltage

- ( IF =10 Amp TC = 25℃)

- ( IF =10 Amp TC = 100℃)

0.55

0.48

0.65

0.57

V

I

R

Maximum Instantaneous Reverse Current

- ( Rated DC Voltage, TC = 25℃)

- ( Rated DC Voltage, TC = 125℃)

1.0

30

mA

Electrial Characteristics

• Low Forward Voltage.

• Low Switching noise.

• High Current Capacity

• Guarantee Reverse Avalanche.

• Guard-Ring for Stress Protection.

• Low Power Loss & High efficiency.

• 125℃ Operating Junction Temperature

• Low Stored Charge Majority Carrier Conduction.

• Plastic Material used Carries Underwriters Laboratory

FEATURES

HDS20A03x Thru HDS20A06x

Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers

Using the Schottky Barrier principle with a Molybdenum barrier metal.

These state-of-the-art geometry features epitaxial construction with oxide

passivation and metal overlay contact. Ideally suited for low voltage, high

frequency rectification, or as free wheeling and polarity protection diodes.

30-60 VOLTS

20 AMPERES

2

1

3

ITO-220AB

JAN 2010