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HTB1A80 Datasheet(PDF) 1 Page - SemiHow Co.,Ltd. |
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HTB1A80 Datasheet(HTML) 1 Page - SemiHow Co.,Ltd. |
1 / 6 page ◎ SEMIHOW REV.A1,March 2013 FEATURES Repetitive Peak Off-State Voltage : 600V/800V R.M.S On–State Current (I T(RMS) = 1A) Sensitive Gate Trigger Current - 5[mA] of IGT at I, II and III Quadrants. - 12[mA] of IGT at IV Quadrant. Applications AC power or phase control through low output current of MCU or IC suck like Heater, Solenoid valve control, etc. General Description Semihow’s sensitive TRIAC product is a glass passivated device, has a low gate trigger current, high stability in gate trigger current to variation of operating temperature and high off state voltage. It is generally suitable for power and phase control in ac application. HTB1A60/HTB1A80 4 Quadrants Sensitive TRIAC T1 T2 G TO-92 Absolute Maximum Ratings (T J=25℃ unless otherwise specified ) Symbol Parameter Conditions Ratings Unit HTB1A60 HTB1A80 V DRM Repetitive Peak Off-State Voltage Sine wave, 50/60Hz, Gate open 600 800 V V RRM Repetitive Peak Reverse Voltage 600 800 V I T(AV) Average On-State Current Full sine wave, T C = 72 oC 0.9 A I T(RMS) R.M.S. On-State Current 1 A I TSM Surge On-State Current ½ cycle, 50Hz/60Hz, Sine wave, Non repetitive 12/13 A I2t Fusing Current t = 10ms 0.7 A2S P GM Forward Peak Gate Power Dissipation T J = 125 °C 2 W P G(AV) Forward Average Gate Power Dissipation T J = 125 °C, over any 20ms 0.2 W I FGM Forward Peak Gate Current T J = 125 °C, pulse width ≤ 20us 0.5 A V RGM Reverse Peak Gate Voltage T J = 125 °C, pulse width ≤ 20us 6 V T J Operating Junction Temperature -40~+125 oC T STG Storage Temperature -40~+150 oC V DRM = 600V/800V I T(RMS) = 1 A I TSM = 13 A I GT = 5mA/12mA Symbol |
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