KSB13003H datasheet(2/6 Pages) SEMIHOW

Part #	KSB13003H

Description	High Voltage Switch Mode Application

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Manufacturer	SEMIHOW [SemiHow Co.,Ltd.]

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◎ SEMIHOW REV.A0,Oct 2007

High Voltage Switch Mode Application

• High voltage, High speed power switching

• Suitable for Electronic Ballast up to 21W

KSB13003H

CHARACTERISTICS

SYMBOL

RATING

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current(DC)

Collector Current(Pulse)

Base Current

Collector Dissipation(Tc=25℃)

Junction Temperature

Storage Temperature

V

CBO

V

CEO

V

EBO

I

C

I

CP

I

B

P

C

T

J

T

STG

900

530

9

1.5

3

0.75

1.10

150

-55~150

V

A

W

℃

1.5 Amperes

NPN Silicon Power Transistor

1.1 Watts

Absolute Maximum Ratings TC=25℃ unless otherwise noted

CHARACTERISTICS

SYMBOL

Test Condition

Min

Typ.

Max

Unit

Collector-Base Breakdown Voltage

V

CBO

I

C=500μA, IE=0

900

V

Collector-Emitter Breakdown Voltage

V

CEO

I

C=10mA, IB=0

530

V

Emitter Cut-off Current

I

EBO

V

EB=9.0V, IC=0

10

㎂

*DC Current Gain

h

FE1

h

FE2

V

CE=10V,IC=0.4A

V

CE=10V,IC=1A

20

6

40

-

*Collector-Emitter Saturation Voltage

V

CE(sat)

I

C=0.5A,IB=0.1A

I

C=1.5A,IB=0.5A

0.8

2.5

V

*Base-Emitter Saturation Voltage

V

BE(sat)

I

C=0.5A,IB=0.1A

1.0

V

Output Capacitance

C

ob

V

CB=10V, f=0.1MHz

21

㎊

Current Gain Bandwidth Product

f

T

V

CE=10V,IC=0.1A

4

㎒

Turn on Time

t

on

Vcc=125V, Ic=2A

I

B1=0.2A, IB2= -0.2A

R

L=125Ω

1.1

㎲

Storage Time

t

stg

4.0

㎲

Fall Time

t

F

0.7

㎲

Electrical Characteristics TC=25℃ unless otherwise noted

* Pulse Test: Pulse Width

≤300μs, Duty Cycle≤2%

TO-92

1. Base

2. Collector

3. Emitter

2

1

3

Package Mark information.

hFE1

Classification

R

20 ~ 30

O

25 ~ 35

Y

30 ~ 40

Note.

S

H

1 3 0 0 3

YWW Z

S

SemiHow Symbol

YWW

Y; year code, WW; week code

Z

hFE1 Classification

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