IRHM9260, JANSR2N7426

Pre-Irradiation

2

www.irf.com

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

-200

—

—

V

VGS = 0V, ID = -1.0mA

∆BVDSS/∆TJ Temperature Coefficient of Breakdown

—

-0.28

—

V/°C

Reference to 25°C, ID = -1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

—

—

0.160

Ω

VGS = -12V, ID = -17A

Resistance

VGS(th)

Gate Threshold Voltage

-2.0

—

-4.0

V

VDS = VGS, ID = -1.0mA

gfs

Forward Transconductance

13

—

—

S ( )VDS > -15V, IDS = -17A ➃

IDSS

Zero Gate Voltage Drain Current

—

—

-25

VDS= -160V ,VGS=0V

—

—

-250

VDS = -160V,

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

—

—

-100

VGS = -20V

IGSS

Gate-to-Source Leakage Reverse

—

—

100

VGS = 20V

Qg

Total Gate Charge

—

—

300

VGS =-12V, ID = -27A

Qgs

Gate-to-Source Charge

—

—

60

nC

VDS = -100V

Qgd

Gate-to-Drain (‘Miller’) Charge

—

—

70

Turn-On Delay Time

—

—

37

VDD = -100V, ID = -27A

tr

Rise Time

—

—

83

RG = 2.35Ω

Turn-Off Delay Time

—

—

140

tf

Fall Time

—

—

172

LS + LD

Total Inductance

—

6.8

—

Measured from Drain lead (6mm /0.25in.

from package) to Source lead (6mm /0.25in.

from package) with Source wires internally

bonded from Source Pin to Drain Pad

Ciss

Input Capacitance

—

6220

—

VGS = 0V, VDS = -25V

Coss

Output Capacitance

—

903

—

pF

f = 1.0MHz

Crss

Reverse Transfer Capacitance

—

150

—

nA

➃

nH

ns

µA

Note: Corresponding Spice and Saber models are available on the G&S Website.

For footnotes refer to the last page

Thermal Resistance

Parameter

Min Typ Max

Units

Test Conditions

RthJC

Junction-to-Case

—

—

0.50

RthCS

Case-to-Sink

—

0.21

—

°C/W

RthJA

Junction-to-Ambient

—

—

48

Typical socket mount

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

IS

Continuous Source Current (Body Diode)

—

—

-27

ISM

Pulse Source Current (Body Diode) ➀

—

—

-108

VSD

Diode Forward Voltage

—

—

-3.3

V

trr

Reverse Recovery Time

—

—

600

ns

Tj = 25°C, IF = -27A, di/dt ≥ 100A/µs

QRR Reverse Recovery Charge

—

—

10

µCVDD ≤ -50V ➃

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

A