PACDN016M datasheet(3/3 Pages) CALMIRCO

Part #	PACDN016M

Description	6 CHANNEL ESD PROTECTION ARRAY WITH ZENER SUPPLY CLAMP

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Manufacturer	CALMIRCO [California Micro Devices Corp]

Direct Link	http://www.calmicro.com

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215 Topaz Street, Milpitas, California 95035

Tel: (408) 263-3214

Fax: (408) 263-7846

www.calmicro.com

CALIFORNIA MICRO DEVICES

PAC DN016

Figure 5

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Similarly for negative ESD pulses, parasitic series inductance from the VN pin to the ground rail will lead to drastically increased

negative voltage on the line being protected.

Another consideration is the output impedance of the power supply for fast transient currents. Most power supplies exhibit a

much higher output impedance to fast transient current spikes. In the VZ equation above, the VSupply term, in reality, is given

by (VDC + Iesd x Rout), where VDC and Rout are the nominal supply DC output voltage and effective output impedance of the

power supply respectively. As an example, a Routof 1 ohm would result in a 10V increment in VZ for a peak Iesd of 10A.

To mitigate these effects, a Zener diode has been integrated into this Protection Array between VP and VN. This Zener diode

clamps the maximum voltage of VP relative to VN at the breakdown voltage of the Zener diode. Although not strictly necessary,

it is recommended that VP be bypassed to the ground plane with a high frequency bypass capacitor. This will lower the

channel clamp voltage, and is especially effective when VP is much lower than the Zener breakdown voltage. The value of this

bypass capacitor should be chosen such that it will absorb the charge transferred by the ESD pulse with minimal change in VP.

Typically a value in the 0.1 µF to 0.2 µF range is adequate for IEC-61000-4-2 level 4 contact discharge protection (8KV). For

higher ESD voltages, the bypass capacitor should be increased accordingly. Ceramic chip capacitors mounted with short

printed circuit board traces are good choices for this application. Electrolytic capacitors should be avoided as they have poor

high frequency characteristics.

As a general rule, the ESD Protection Array should be located as close as possible to the point of entry of expected electrostatic

discharges. The power supply bypass capacitor mentioned above should be as close to the VP pin of the Protection Array as

possible, with minimum PCB trace lengths to the power supply and ground planes to minimize stray series inductance.

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