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2SB1065 Datasheet(PDF) 2 Page - Savantic, Inc. |
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2SB1065 Datasheet(HTML) 2 Page - Savantic, Inc. |
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2 / 3 page  SavantIC Semiconductor Product Specification 2 Silicon PNP Power Transistors 2SB1065 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ,IB=0 -50 V V(BR)CBO Collector-base breakdown voltage IC=-50µA ,IE=0 -60 V V(BR)EBO Emitter-base breakdown voltage IE=-50µA ,IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A -1.0 V VBEsat Base-emitter saturation voltage IC=-2A; IB=-0.2A -1.5 V ICBO Collector cut-off current VCB=-40V; IE=0 -1.0 µA IEBO Emitter cut-off current VEB=-4V; IC=0 -1.0 µA hFE DC current gain IC=-0.5A ; VCE=-3V 56 390 COB Output capacitance IE=0 ; VCB=-10V,f=1MHz 50 pF fT Transition frequency IC=-0.5A ; VCE=-5V 70 MHz hFE Classifications N P Q R 56-120 82-180 120-270 180-390 |
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Similar Description - 2SB1065 |
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