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IRG7PH42UD1MPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRG7PH42UD1MPBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 9 page  2 www.irf.com © 2012 International Rectifier April 26, 2012 IRG7PH42UD1MPbF Notes: VCC = 80% (VCES), VGE = 20V, L = 22μH, RG = 10Ω. Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V (BR)CES safely. Rθ is measured at TJ of approximately 90°C.
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 78A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. FBSOA operating conditions only V GE = 0V, TJ = 75°C, PW ≤ 10μs. Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 — — V VGE = 0V, IC = 100μA e ΔV(BR)CES /ΔT J Temperature Coeff. of Breakdown Voltage — 1.2 — V/°C VGE = 0V, IC = 2.0mA (25°C-150°C) —1.7 2.0 IC = 30A, VGE = 15V, TJ = 25°C —2.0 — IC = 30A, VGE = 15V, TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 V VCE = VGE, IC = 1.0mA gfe Forward Transconductance — 32 — S VCE = 50V, IC = 30A, PW = 80μs — 1.0 100 VGE = 0V, VCE = 1200V — 230 — VGE = 0V, VCE = 1200V, TJ = 150°C — 1.15 1.30 IF = 30A —1.10 — IF = 30A, TJ = 150°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±30V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Qg Total Gate Charge (turn-on) — 180 270 IC = 30A Qge Gate-to-Emitter Charge (turn-on) — 24 36 nC VGE = 15V Qgc Gate-to-Collector Charge (turn-on) — 70 110 VCC = 600V IC = 30A, VCC = 600V, VGE = 15V Eoff Turn-Off Switching Loss — 1210 1450 RG = 10 Ω, L = 200μH,TJ = 25°C Energy losses include tail td(off) Turn-Off delay time — 270 290 IC = 30A, VCC = 600V, VGE = 15V tf Fall time — 35 43 RG = 10 Ω, L = 200μH,TJ = 25°C IC = 30A, VCC = 600V, VGE = 15V Eoff Turn-Off Switching Loss — 1936 — μJRG = 10 Ω, L = 200μH,TJ = 150°C Energy losses include tail td(off) Turn-Off delay time — 300 — ns IC = 30A, VCC = 600V, VGE = 15V tf Fall time — 160 — RG = 10 Ω, L = 200μH, TJ = 150°C Cies Input Capacitance — 3390 — VGE = 0V Coes Output Capacitance — 130 — pF VCC = 30V Cres Reverse Transfer Capacitance — 83 — f = 1.0Mhz TJ = 150°C, IC = 120A RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 960V, Vp =1200V Rg = 10 Ω, VGE = +20V to 0V Conditions μA V V μJ ns VCE(on) Collector-to-Emitter Saturation Voltage ICES Collector-to-Emitter Leakage Current VFM Diode Forward Voltage Drop |
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