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2SB1154 Datasheet(PDF) 2 Page - Savantic, Inc. |
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2SB1154 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 4 page SavantIC Semiconductor Product Specification 2 Silicon PNP Power Transistors 2SB1154 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 -80 V VCEsat-1 Collector-emitter saturation voltage IC=-6A ;IB=-0.3A -0.5 V VCEsat-2 Collector-emitter saturation voltage IC=-10A ;IB=-1A -1.5 V VBEsat-1 Base-emitter saturation voltage IC=-6A ;IB=-0.3A -1.5 V VBEsat-2 Base-emitter saturation voltage IC=-10A ;IB=-1A -2.5 V ICBO Collector cut-off current VCB=-100V; IE=0 -10 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -50 µA hFE-1 DC current gain IC=-0.1A ; VCE=-2V 45 hFE -2 DC current gain IC=-3A ; VCE=-2V 90 260 hFE -3 DC current gain IC=-6A ; VCE=-2V 30 fT Transition frequency IC=-0.5A ; VCE=-10V;f=10MHz 30 MHz Switching times ton Turn-on time 0.5 µs tstg Storage time 1.0 µs tf Fall time IC=-6A ;IB1=-IB2=-0.6A VCC=-50V 0.2 µs hFE-2 classifications Q P 90-180 130-260 |
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