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AUIRF1404S Datasheet(PDF) 1 Page - International Rectifier |
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AUIRF1404S Datasheet(HTML) 1 Page - International Rectifier |
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1 / 13 page  AUIRF1404S AUIRF1404L HEXFET® Power MOSFET 06/07/11 www.irf.com 1 PD -97680 Features ● Advanced Planar Technology ● Dynamic dV/dT Rating ● 175°C Operating Temperature ● Fast Switching ● Fully Avalanche Rated ● Repetitive Avalanche Allowed up to Tjmax ● Lead-Free, RoHS Compliant ● Automotive Qualified * AUTOMOTIVE GRADE S D G Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. GD S Gate Drain Source D2Pak AUIRF1404S TO-262 AUIRF1404L G D S GD S HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ Symbol Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) i ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) i ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current i PD @TA = 25°C Maximum Power Dissipation W PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS Single Pulse Avalanche Energy (Thermally Limited) di mJ IAR Avalanche Current à A EAR Repetitive Avalanche Energy mJ dv/dt Peak Diode Recovery ei V/ns TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Thermal Resistance Symbol Parameter Typ. Max. Units RθJC Junction-to-Case k ––– 0.75 °C/W RθJA Junction-to-Ambient (PCB Mounted, steady-state) j ––– 40 3.8 200 5.0 20 A °C 300 -55 to + 175 ± 20 1.3 519 95 Max. 162 h 115 h 650 75 Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design thatHEXFETpowerMOSFETsarewellknownfor,provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. VDSS 40V RDS(on) typ. 3.5m Ω max. 4.0m Ω ID (Silicon Limited) 162Ah ID (Package Limited) 75A |
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