Electronic Components Datasheet Search |
|
AUIRF5210STRR Datasheet(PDF) 2 Page - International Rectifier |
|
AUIRF5210STRR Datasheet(HTML) 2 Page - International Rectifier |
2 / 12 page AUIRF5210S 2 www.irf.com 08/20/2012 Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11) Starting TJ = 25°C, L = 0.46mH RG = 25, IAS = -23A. (See Figure 12) ISD -23A, di/dt -650A/µs, VDD V(BR)DSS, TJ 150°C. Pulse width 300µs; duty cycle 2%.
When mounted on 1" square PCB (FR-4or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. R is measured at TJ approximately 90°C Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage -100 ––– ––– V VDSS/TJ Breakdown Voltage Temp. Coefficient ––– -0.11 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– ––– 60 m VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VGS(th) Forward Transconductance 9.5 ––– ––– S IDSS Drain-to-Source Leakage Current ––– ––– -50 μA ––– ––– -250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Qg Total Gate Charge ––– 150 230 nC Qgs Gate-to-Source Charge ––– 22 33 Qgd Gate-to-Drain ("Miller") Charge ––– 81 120 td(on) Turn-On Delay Time ––– 14 ––– ns tr Rise Time –––63––– td(off) Turn-Off Delay Time ––– 72 ––– tf Fall Time –––55––– LD Internal Drain Inductance ––– 4.5 ––– nH Between lead, 6mm (0.25in.) LS Internal Source Inductance ––– 7.5 ––– from package and center of die contact Ciss Input Capacitance ––– 2780 ––– pF Coss Output Capacitance ––– 800 ––– Crss Reverse Transfer Capacitance ––– 430 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– -38 (Body Diode) A ISM Pulsed Source Current ––– ––– -140 (Body Diode) Ã VSD Diode Forward Voltage ––– ––– -1.6 V trr Reverse Recovery Time ––– 170 260 ns Qrr Reverse Recovery Charge ––– 1180 1770 nC ton Forward Turn-On Time Intrinsicturn-ontimeis negligible(turn-onis dominatedbyLS+LD) VDS = VGS, ID = -250μA VDS = -100V, VGS = 0V VDS = -80V, VGS = 0V, TJ = 125°C Conditions VGS = 0V, ID = -250μA Reference to 25°C, ID = -1mA VGS = 10V, ID = -38A f TJ = 25°C, IF = -23A, VDD = -25V di/dt = -100A/μs f TJ = 25°C, IS = -23A, VGS = 0V f showing the integral reverse p-n junction diode. VGS = -10V f MOSFET symbol VGS = 0V VDS = -25V Conditions ƒ = 1.0MHz, See Fig. 5 RG = 2.4 ID = -23A VDS = -50V, ID = -23A VDD = -50V ID = -23A VGS = 20V VGS = -20V VDS = -80V VGS = -10V f Conditions |
Similar Part No. - AUIRF5210STRR |
|
Similar Description - AUIRF5210STRR |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |