AUIRF7207Q

1

April 30, 2013

HEXFET® is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.

These are stress ratings only; and

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-

maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under

board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.

AUTOMOTIVE GRADE

-20V

0.06



-5.4A

Parameter

Max.

Units

Drain-to-Source Voltage

-20

V

-5.4

A

-4.3

Pulsed Drain Current



-43

Power Dissipation

2.5

W

Power Dissipation

1.6

Linear Derating Factor

0.02

W/°C

Gate-to-Source Voltage

± 12

V

Gate-to-Source Voltage Single Pulse tp<10µs

-16

V

Single Pulse Avalanche Energy (Thermally Limited)



140

mJ

Operating Junction and

-55 to + 150

°C

 

Storage Temperature Range

 

SO-8

Top View

8

1

2

3

4

5

6

7

D

D

D

G

S

A

D

S

S

 

Features





















Description

Specifically designed for Automotive applications, this cellular

design of HEXFET® Power MOSFETs utilizes the latest

processing techniques to achieve low on-resistance per silicon

area. This benefit combined with the fast switching speed and

ruggedized device design that HEXFET power MOSFETs are

well known for, provides the designer with an extremely

efficient and reliable device for use in Automotive and a wide

variety of other applications.

Thermal Resistance

Symbol

Parameter

Typ.

Max.

Units

Junction-to-Ambient



–––

50

°C/W

Base part number

Package Type

Standard Pack

Orderable Part Number

Form

Quantity

AUIRF7207Q

SO-8

Tube

95

AUIRF7207Q

Tape and Reel

2500

AUIRF7207QTR