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AUIRF7738L2TR1 Datasheet(PDF) 1 Page - International Rectifier |
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AUIRF7738L2TR1 Datasheet(HTML) 1 Page - International Rectifier |
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1 / 11 page  www.irf.com 1 AUIRF7738L2TR AUIRF7738L2TR1 Automotive DirectFET® Power MOSFET AUTOMOTIVE GRADE HEXFET® is a registered trademark of International Rectifier. • Advanced Process Technology • Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications • Exceptionally Small Footprint and Low Profile • High Power Density • Low Parasitic Parameters • Dual Sided Cooling • 175°C Operating Temperature • Repetitive Avalanche Capability for Robustness and Reliability • Lead Free, RoHS Compliant and Halogen Free • Automotive Qualified * 11/5/10 Applicable DirectFET® Outline and Substrate Outline DirectFET® ISOMETRIC L6 SB SC M2 M4 L4 L6 L8 DD G S S S S S S Description The AUIRF7738L2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging technology to achieve exceptional performance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile.The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems. This HEXFET ® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging platform coupled with the latest silicon technology allows the AUIRF7738L2 to offer substantial system level savings and performance improvement specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications. V(BR)DSS 40V RDS(on) typ. 1.2m Ω max. 1.6m Ω ID (Silicon Limited) 184A Qg 129nC Parameter Units VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)f ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)f ID @ TA = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)e ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current g PD @TC = 25°C Power Dissipation f PD @TA = 25°C Power Dissipation e EAS Single Pulse Avalanche Energy (Thermally Limited) h EAS (tested) Single Pulse Avalanche Energy Tested Value h IAR Avalanche Current Ãg A EAR Repetitive Avalanche Energy g mJ TP Peak Soldering Temperature TJ Operating Junction and TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RθJA Junction-to-Ambient e ––– 45 RθJA Junction-to-Ambient j 12.5 ––– RθJA Junction-to-Ambient k 20 ––– RθJCan Junction-to-Can fl ––– 1.6 RθJ-PCB Junction-to-PCB Mounted ––– 0.5 Linear Derating Factor f W/°C Max. 184 130 736 538 134 40 ± 20 315 0.63 35 94 3.3 270 -55 to + 175 See Fig.18a, 18b, 16, 17 V A mJ °C/W W °C Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. PD - 96333A |
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