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PRN11016N3300J Datasheet(PDF) 1 Page - California Micro Devices Corp |
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PRN11016N3300J Datasheet(HTML) 1 Page - California Micro Devices Corp |
1 / 4 page © 2000 California Micro Devices Corp. All rights reserved. 10/25/2000 1 PRN100/110 CALIFORNIA MICRO DEVICES 215 Topaz Street, Milpitas, California 95035 Tel: (408) 263-3214 Fax: (408) 263-7846 www.calmicro.com Isolated Resistor Termination Network Features • Stable resistor network • High speed termination network • 8 or 12 terminating lines/package • Saves board space and reduces assembly cost Product Description CAMD’s PRN100/110 Isolated Resistor Termination Networks offer high integration and performance in a miniature QSOP or SOIC package, which saves critical board area and provides manufacturing cost and reliability efficiencies. Why thin film resistor networks? A terminating resistor is used to reduce or eliminate unwanted reflections on a transmission line or in some cases provide DC pull-up/ pull-down. It can perform this function only when its Applications • Series termination • Parallel termination • Pull up/pull down • Digital pulse squaring • Coding and decoding • Telemetry Refer to AP-201 Termination Application Note for further information. C0970500 SCHEMATIC CONFIGURATION resistance value is closely matched to the characteristic impedance of the transmission line. The resistors used for terminating transmission lines must be noiseless, stable, and functional at high frequencies. Unlike thin film-based resistor networks, conventional thick film resistors used for this purpose are not stable over temperature and time, and may have functional limita- tions when used in high frequency applications. 20 21 22 23 24 R R R R R R R R R R R R R R R R R R R R 19 18 17 16 16 15 15 14 14 13 13 12 11 1 1 2 2 3 3 4 4 5 9 5 6 10 6 7 11 7 8 12 8 9 10 S N O I T A C I F I C E P S D R A D N A T S ) R ( e c n a r e l o T e t u l o s b A% 5 ± R C Tm p p 0 0 1 ± e g n a R e r u t a r e p m e T g n i t a r e p OC ° 5 2 1 o t C ° 5 5 – r o t s i s e R / g n i t a R r e w o P K 1 < R r o f W m 0 0 1 Ω R r o f W m 5 2 ≥ K 1 Ω e c n a t s i s e R n o i t a l u s n I m u m i n i MM 0 0 0 , 0 1 Ω e r u t a r e p m e T e g a r o t SC ° 0 5 1 + o t C ° 5 6 – g n i t a R r e w o P e g a k c a P. x a m , W 1 S E U L A V D R A D N A T S ( R Ω Ω Ω Ω Ω) d e t a l o s I e d o C ( R Ω Ω Ω Ω Ω) d e t a l o s I e d o C 0 10 R 0 10 7 40 0 7 4 2 20 R 2 2K 11 0 0 1 3 30 R 3 3K 2 1 0 0 2 9 30 R 9 3K 7 . 4 1 0 7 4 0 0 10 0 0 1K 0 1 2 0 0 1 0 3 30 0 3 3 S N O I T A C I F I C E P S D R A D N A T S - N O N ) R ( e c n a r e l o T e t u l o s b A% 1 ± , % 2 ± S E U L A V D R A D N A T S - N O N e g n a R e c n a t s i s e RK 0 1 o t 0 1 Ω |
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