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AUIRFL014NTR Datasheet(PDF) 1 Page - International Rectifier |
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AUIRFL014NTR Datasheet(HTML) 1 Page - International Rectifier |
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1 / 11 page  08/24/11 AUIRFL014N www.irf.com 1 HEXFET® Power MOSFET S D G AUTOMOTIVE GRADE Features l Advanced Planar Technology l Low On-Resistance l Dynamic dV/dT Rating l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * SOT-223 AUIRFL014N D G D S GD S Gate Drain Source V(BR)DSS 55V RDS(on) max. 0.16 Ω ID 1.9A Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on- resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. Description Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ Parameter Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10Vh ID @ TA = 25°C Continuous Drain Current, VGS @ 10Vg ID @ TA = 70°C Continuous Drain Current, VGS @ 10V g IDM Pulsed Drain Current PD @TA = 25°C Power Dissipation (PCB Mount) h W PD @TA = 25°C Power Dissipation (PCB Mount) g W Linear Derating Factor (PCB Mount) g W/°C VGS Gate-to-Source Voltage V EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current à A EAR Repetitive Avalanche Energy g mJ dv/dt Peak Diode Recovery dv/dt e V/ns TJ Operating Junction and TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RθJA Junction-to-Ambient (PCB mount, steady state) g 90 120 RθJA Junction-to-Ambient (PCB mount, steady state) h 50 60 Max. 2.7 1.5 15 1.9 5.0 0.1 48 1.7 1.0 °C/W °C A -55 to + 150 2.1 8.3 ±20 PD-96382A |
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