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AUIRFR9024NTR Datasheet(PDF) 1 Page - International Rectifier |
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AUIRFR9024NTR Datasheet(HTML) 1 Page - International Rectifier |
1 / 13 page AUIRFR9024N AUIRFU9024N HEXFET® Power MOSFET 01/19/11 www.irf.com 1 D-Pak AUIRFR9024N GD S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ V(BR)DSS -55V RDS(on) max. 0.175 Ω ID -11A Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ -10V ID @ TC = 100°C Continuous Drain Current, VGS @ -10V A IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS Single Pulse Avalanche Energy(Thermally limited) d mJ IAR Avalanche Current à A EAR Repetitive Avalanche Energy mJ dv/dt Peak Diode Recovery dv/dt e V/ns TJ Operating Junction and TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 3.3 RθJA Junction-to-Ambient (PCB mount) ** ––– 50 °C/W RθJA Junction-to-Ambient ––– 110 -55 to + 150 300 (1.6mm from case ) 38 0.30 ± 20 Max. -11 -8 -44 -10 3.8 62 -6.6 S D G I-Pak AUIRFU9024N S D G D D S D G l Advanced Planar Technology l Low On-Resistance l P-Channel l Dynamic dV/dT Rating l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * Features Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on- resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. Description AUTOMOTIVE GRADE PD - 96351 |
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