AUIRFS4310ZTRR datasheet(4/12 Pages) IRF

Part #	AUIRFS4310ZTRR

Description	HEXFETPower MOSFET

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Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

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AUIRFS4310Z

4

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Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance vs. Temperature

Fig 2. Typical Output Characteristics

Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage

Fig 5. Typical Capacitance vs. Drain-to-Source Voltage

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

1

10

100

1000

 60μs PULSE WIDTH

Tj = 25°C

4.5V

VGS

TOP

15V

10V

8.0V

6.0V

5.5V

5.0V

4.8V

BOTTOM

4.5V

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

10

100

1000

 60μs PULSE WIDTH

Tj = 175°C

4.5V

VGS

TOP

15V

10V

8.0V

6.0V

5.5V

5.0V

4.8V

BOTTOM

4.5V

2.0

3.0

4.0

5.0

6.0

7.0

8.0

VGS, Gate-to-Source Voltage (V)

0.1

1

10

100

1000

VDS = 50V

 60μs PULSE WIDTH

TJ = 25°C

TJ = 175°C

-60 -40 -20 0

20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

0.5

1.0

1.5

2.0

2.5

ID = 75A

VGS = 10V

1

10

100

VDS, Drain-to-Source Voltage (V)

0

2000

4000

6000

8000

10000

12000

Coss

Crss

Ciss

VGS = 0V,

f = 1 MHZ

Ciss = Cgs + Cgd, Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

0

40

80

120

160

200

QG Total Gate Charge (nC)

0

4

8

12

16

20

VDS= 80V

VDS= 50V

VDS= 20V

ID= 75A

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