AUIRFS8408-7P datasheet(4/12 Pages) IRF

Part #	AUIRFS8408-7P

Description	HEXFETPower MOSFET

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Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

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April 25 ,2013

AUIRFS8408-7P

Fig 8. Maximum Safe Operating Area

Fig 10. Drain-to-Source Breakdown Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 11. Typical COSS Stored Energy

Fig 9. Maximum Drain Current vs.

Case Temperature

Fig 12. Maximum Avalanche Energy vs. DrainCurrent

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

VSD, Source-to-Drain Voltage (V)

0.1

1

10

100

1000

TJ = 25°C

TJ = 175°C

VGS = 0V

25

50

75

100

125

150

175

TC , Case Temperature (°C)

0

60

120

180

240

300

360

420

Limited By Package

-60

-20

20

60

100

140

180

TJ , Temperature ( °C )

40

41

42

43

44

45

46

47

48

49

Id = 5.0mA

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

0.1

1

10

100

1000

10000

Tc = 25°C

Tj = 175°C

Single Pulse

10msec

1msec

OPERATION IN THIS AREA

LIMITED BY R DS(on)

100μsec

DC

Limited by Package

-5

0

5

10 15 20 25 30 35 40 45

VDS, Drain-to-Source Voltage (V)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

25

50

75

100

125

150

175

Starting TJ , Junction Temperature (°C)

0

500

1000

1500

2000

2500

ID

TOP

25A

52A

BOTTOM 100A

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