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AUIRLS3034 Datasheet(PDF) 1 Page - International Rectifier |
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AUIRLS3034 Datasheet(HTML) 1 Page - International Rectifier |
1 / 12 page 11/29/11 www.irf.com 1 HEXFET® Power MOSFET S D G PD - 97716A AUIRLS3034 GD S Gate Drain Source D G D2Pak AUIRLS3034 S AUTOMOTIVE GRADE Features ● Advanced Process Technology ● Ultra Low On-Resistance ● Dynamic dv/dt Rating ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax ● Lead-Free, RoHS Compliant ● Automotive Qualified * HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Symbol Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current d PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS Single Pulse Avalanche Energy (Thermally Limited) e mJ IAR Avalanche Current d A EAR Repetitive Avalanche Energy d mJ dv/dt Peak Diode Recovery f V/ns TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Thermal Resistance Symbol Parameter Typ. Max. Units RJC Junction-to-Case kl ––– 0.4 RJA Junction-to-Ambient (PCB Mount) j ––– 40 A °C °C/W 375 4.6 ±20 2.5 10lbf xin (1.1Nxm) -55 to + 175 300 Max. 343 c 243 c 1372 195 255 See Fig. 14, 15, 22a, 22b, VDSS 40V RDS(on) typ. 1.4m max. 1.7m ID (Silicon Limited) 343A c ID (Package Limited) 195A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. |
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