AUIRLS3034 datasheet(1/12 Pages) IRF

Part #	AUIRLS3034

Description	HEXFETPower MOSFET

Download	12 Pages

Scroll/Zoom	100%

Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

Logo

1 / 12 page

11/29/11

www.irf.com

1

HEXFET® Power MOSFET

S

D

G

PD - 97716A

AUIRLS3034

GD

S

Gate

Drain

Source

D

G

D2Pak

AUIRLS3034

S

AUTOMOTIVE GRADE

Features

●

Advanced Process Technology

●

Ultra Low On-Resistance

●

Dynamic dv/dt Rating

●

175°C Operating Temperature

●

Fast Switching

●

Repetitive Avalanche Allowed up to Tjmax

●

Lead-Free, RoHS Compliant

●

Automotive Qualified *

HEXFET® is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-

maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured

under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.

Symbol

Parameter

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V (Silicon Limited)

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V (Silicon Limited)

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V (Package Limited)

IDM

Pulsed Drain Current

d

PD @TC = 25°C

Maximum Power Dissipation

W

Linear Derating Factor

W/°C

VGS

Gate-to-Source Voltage

V

EAS

Single Pulse Avalanche Energy (Thermally Limited)

e

mJ

IAR

Avalanche Current d

A

EAR

Repetitive Avalanche Energy d

mJ

dv/dt

Peak Diode Recovery

f

V/ns

TJ

Operating Junction and

TSTG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

Mounting torque, 6-32 or M3 screw

Thermal Resistance

Symbol

Parameter

Typ.

Max.

Units

RJC

Junction-to-Case

kl

–––

0.4

RJA

Junction-to-Ambient (PCB Mount)

j

–––

40

A

°C

°C/W

375

4.6

±20

2.5

10lbf

xin (1.1Nxm)

-55 to + 175

300

Max.

343

c

243

c

1372

195

255

See Fig. 14, 15, 22a, 22b,

VDSS

40V

RDS(on) typ.

1.4m



max.

1.7m



ID (Silicon Limited)

343A

c

ID (Package Limited) 195A

Description

Specifically designed for Automotive applications, this HEXFET®

Power MOSFET utilizes the latest processing techniques to achieve

extremely low on-resistance per silicon area. Additional features of

this design are a 175°C junction operating temperature, fast

switching speed and improved repetitive avalanche rating . These

features combine to make this design an extremely efficient and

reliable device for use in Automotive applications and a wide variety

of other applications.

Similar Part No. - AUIRLS3034

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	AUIRLS3034	686Kb / 10P	Advanced Process Technology 2015-11-4
International Rectifier	AUIRLS3034-7P	270Kb / 12P	HEXFETPower MOSFET
Infineon Technologies A...	AUIRLS3034-7P	704Kb / 10P	AUTOMOTIVE GRADE 2015-11-4
International Rectifier	AUIRLS3034-7TRL	270Kb / 12P	HEXFETPower MOSFET
Infineon Technologies A...	AUIRLS3034-7TRL	704Kb / 10P	AUTOMOTIVE GRADE 2015-11-4

More results

AUIRLS3034 Datasheet(PDF) 1 Page - International Rectifier

AUIRLS3034 Datasheet(HTML) 1 Page - International Rectifier

Similar Part No. - AUIRLS3034

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Datasheet Download

Link URL